OMO ElectronicOMO Electronic
Expand menu
Hola, regístrateMi cuenta
0 Carro

IPD60R1K5CEAUMA1

IPD60R1K5CEAUMA1
Mfr. #:
IPD60R1K5CEAUMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET CONSUMER
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPD60R1K5CEAUMA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IPD60R1K5CEAUMA1 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-252-3
Vds - Voltaje de ruptura de drenaje-fuente:
600 V
Nombre comercial:
CoolMOS
Embalaje:
Carrete
Altura:
2.3 mm
Longitud:
6.5 mm
Serie:
CoolMOS CE
Ancho:
6.22 mm
Marca:
Infineon Technologies
Sensible a la humedad:
Yes
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
2500
Subcategoría:
MOSFET
Parte # Alias:
IPD60R1K5CE SP001396902
Unidad de peso:
0.011993 oz
Tags
IPD60R1K5, IPD60R1K, IPD60R1, IPD60R, IPD60, IPD6, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Yang
N-Channel 600 V 1.5 mOhm 9.4 nC CoolMOS™ CE Power Transistor - TO-252
***ark
Mosfet, N-Ch, 600V, 5A, To-252; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:600V; On Resistance Rds(On):1.26Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Rohs Compliant: Yes |Infineon IPD60R1K5CEAUMA1
***icontronic
Power Field-Effect Transistor, 5A I(D), 600V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***ineon
Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV
***ure Electronics
Single N-Channel 600 V 500 Ohm 0.65 nC SIPMOS® Small Signal Mosfet - SOT-23
***ical
Trans MOSFET N-CH 600V 0.021A Automotive 3-Pin SOT-23 T/R
***ark
Mosfet, N-Ch, 600V, 0.021A, 0.5W; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:21Ma; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Infineon BSS127H6327XTSA2
***ineon
All Small Signal n-channel products are suitable for automotive applications (excluding 2N7002). | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Qualified according to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Onboard charger; Telecom
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 21 / Drain-Source Voltage (Vds) V = 600 / ON Resistance (Rds(on)) Ohm = 500 / Gate-Source Voltage V = 20 / Fall Time ns = 115 / Rise Time ns = 9.7 / Turn-OFF Delay Time ns = 14 / Turn-ON Delay Time ns = 6.1 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 500
***ure Electronics
Single N-Channel 600 V 2.1 Ohm 6.7 nC CoolMOS™ Power Mosfet - SOT-223
***ical
Trans MOSFET N-CH 600V 3.7A 3-Pin(2+Tab) SOT-223 T/R
***ark
MOSFET, N-CH, 600V, 3.7A, SOT-223-3; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:3.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
***ineon
Cost-effective drop-in replacement for DPAK | Summary of Features: Drop-in replacement for DPAK at lower cost; Space savings in designs with low power dissipation; Comparable thermal behavior to DPAK | Target Applications: Lighting; Adapter; Consumer
***nell
MOSFET, N-CH, 600V, 3.7A, SOT-223-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.7A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 1.89ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 5W; Transistor Case Style: SOT-223; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: CoolMOS CE Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ure Electronics
Single N-Channel 600 V 3.4 Ohm 4.6 nC CoolMOS™ Power Mosfet - SOT-223
***Yang
Trans MOSFET N-CH 650V 3.9A 3-Pin SOT-223 - Tape and Reel
***nell
MOSFET, N-CH, 600V, 2.6A, SOT-223-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.6A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 3.06ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 5W; Transistor Case Style: SOT-223; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: CoolMOS CE Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
Cost-effective drop-in replacement for DPAK | Summary of Features: Drop-in replacement for DPAK at lower cost; Space savings in designs with low power dissipation; Comparable thermal behavior to DPAK | Target Applications: Lighting; Adapter; Consumer
***icroelectronics
N-channel 600 V, 13 Ohm typ., 0.3 A Zener-protected SuperMESH Power MOSFET in SOT-223 package
***ure Electronics
N-Channel 600 V 15 Ohm 4.9 nC Surface Mount SuperMESH Power MosFet- SOT-223
***ical
Trans MOSFET N-CH 600V 0.3A 4-Pin(3+Tab) SOT-223 T/R
***ment14 APAC
Transistor, MOSFET; Transistor Polarity:N Channel; Continuous Drain Current Id:300mA; Source Voltage Vds:600V; On Resistance Rds(on):15ohm;
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 300 / Drain-Source Voltage (Vds) V = 600 / ON Resistance (Rds(on)) Ohm = 15 / Gate-Source Voltage V = 30 / Fall Time ns = 28 / Rise Time ns = 5 / Turn-OFF Delay Time ns = 13 / Turn-ON Delay Time ns = 5.5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / Packaging = Tape & Reel / Power Dissipation (Pd) W = 3.3
***nell
TRANSISTOR, MOSFET; Transistor Polarity: N Channel; Continuous Drain Current Id: 300mA; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 15ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipation Pd: 2W; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 300mA; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Voltage Vds Typ: 600V; Voltage Vgs Max: 3.75V; Voltage Vgs Rds on Measurement: 10V
***ure Electronics
Single N-Channel 600 V 190 Ohm 1.08 nC 1.25 W Silicon SMT Mosfet - SOT-23
***ical
Trans MOSFET N-CH 600V 0.07A Automotive 3-Pin SOT-23 T/R
***(Formerly Allied Electronics)
N-Channel Enhancement MOSFET SOT-23 | Diodes Inc BSS127S-7
***nell
MOSFET, N-CH, 600V, 0.05A, SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 50mA; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 80ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.5V; Power Dissipation Pd: 610mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***ark
Mosfet, N-Ch, 600V, 0.05A, Sc-59 Rohs Compliant: Yes |Diodes Inc. BSS127SSN-7
***ure Electronics
Single N-Channel 600 V 190 Ohm 1.08 nC 1.25 W Mosfet - SOT-23
***ical
Trans MOSFET N-CH 600V 0.07A Automotive 3-Pin SC-59 T/R
***des Inc SCT
N-CHANNEL ENHANCEMENT MODE FIELD MOSFET, 600V VDS, 20±V VGS,
***nsix Microsemi
Small Signal Field-Effect Transistor, 0.045A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***nell
MOSFET, N-CH, 600V, 0.05A, SC-59;
***S
French Electronic Distributor since 1988
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ CE Power MOSFETs
Infineon's CoolMOS™ CE Power MOSFETs are a technology platform of high voltage power MOSFETs that are designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. CoolMOS™ CE portfolio offers 500V, 600V, 650V, 700V, and 800V devices targeting low power chargers for mobile devices and power tools, adapters for notebook and laptops, LCD, LED TV and LED lighting. This new series of CoolMOS™ is cost optimized to meet typical requirements in consumer with no compromise on proven CoolMOS™ quality and reliability while still being price attractive.
CoolMOS CE Power MOSFETs - 600-650V
Infineon 600V/650V CoolMOS™ CE N-Channel Power MOSFETs are a technology platform of Infineon's market leading high voltage power MOSFET designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. These 600V/650V CoolMOS™ MOSFETs are cost optimized to meet typical requirements in consumer with no compromise on proven CoolMOS™ quality and reliability while still been price attractive. These devices target low power chargers for mobile devices and power tools, LCD, LED TV and LED lighting applications.
Parte # Mfg. Descripción Valores Precio
IPD60R1K5CEAUMA1
DISTI # V36:1790_13982026		Infineon Technologies AGTrans MOSFET N-CH 600V 5A T/R0
    IPD60R1K5CEAUMA1
    DISTI # IPD60R1K5CEAUMA1CT-ND    		Infineon Technologies AGMOSFET N-CHANNEL 650V 5A TO252
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		7374In Stock
    • 1000:$0.3060
    • 500:$0.3877
    • 100:$0.5183
    • 10:$0.6820
    • 1:$0.8100
    IPD60R1K5CEAUMA1
    DISTI # IPD60R1K5CEAUMA1DKR-ND    		Infineon Technologies AGMOSFET N-CHANNEL 650V 5A TO252
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		7374In Stock
    • 1000:$0.3060
    • 500:$0.3877
    • 100:$0.5183
    • 10:$0.6820
    • 1:$0.8100
    IPD60R1K5CEAUMA1
    DISTI # IPD60R1K5CEAUMA1TR-ND    		Infineon Technologies AGMOSFET N-CHANNEL 650V 5A TO252
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape & Reel (TR)    		5000In Stock
    • 25000:$0.2304
    • 12500:$0.2415
    • 5000:$0.2574
    • 2500:$0.2733
    IPD60R1K5CEAUMA1
    DISTI # 30163693    		Infineon Technologies AGTrans MOSFET N-CH 600V 5A T/R2500
    • 2500:$0.1791
    IPD60R1K5CEAUMA1
    DISTI # IPD60R1K5CEAUMA1    		Infineon Technologies AGCONSUMER - Tape and Reel (Alt: IPD60R1K5CEAUMA1)
    RoHS: Compliant
    Min Qty: 2500
    Container: Reel    		Americas - 0
    • 2500:$0.2069
    • 5000:$0.1999
    • 10000:$0.1929
    • 15000:$0.1859
    • 25000:$0.1829
    IPD60R1K5CEAUMA1
    DISTI # SP001396902    		Infineon Technologies AGCONSUMER (Alt: SP001396902)
    RoHS: Compliant
    Min Qty: 2500    		Europe - 0
    • 2500:€0.3159
    • 5000:€0.2679
    • 10000:€0.2379
    • 15000:€0.2139
    • 25000:€0.1989
    IPD60R1K5CEAUMA1
    DISTI # 34AC1676    		Infineon Technologies AGMOSFET, N-CH, 600V, 5A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:5A,Drain Source Voltage Vds:600V,On Resistance Rds(on):1.26ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation RoHS Compliant: Yes0
    • 1000:$0.2460
    • 500:$0.2700
    • 250:$0.2940
    • 100:$0.3180
    • 50:$0.3860
    • 25:$0.4530
    • 10:$0.5210
    • 1:$0.6200
    IPD60R1K5CEAUMA1
    DISTI # 726-IPD60R1K5CEAUMA1    		Infineon Technologies AGMOSFET CONSUMER
    RoHS: Compliant    		19977
    • 1:$0.6200
    • 10:$0.5210
    • 100:$0.3180
    • 1000:$0.2460
    • 2500:$0.2100
    IPD60R1K5CEAUMA1
    DISTI # 2781167    		Infineon Technologies AGMOSFET, N-CH, 600V, 5A, TO-252
    RoHS: Compliant    		0
    • 5000:$0.3230
    • 1000:$0.3410
    • 500:$0.3610
    • 250:$0.4170
    • 100:$0.4930
    • 25:$0.6050
    • 5:$0.6940
    IPD60R1K5CEAUMA1
    DISTI # 2781167    		Infineon Technologies AGMOSFET, N-CH, 600V, 5A, TO-252
    RoHS: Compliant    		884
    • 500:£0.1940
    • 250:£0.2210
    • 100:£0.2500
    • 25:£0.4300
    • 5:£0.4630
    Imagen Parte # Descripción
    ES1J

    Mfr.#: ES1J

    OMO.#: OMO-ES1J

    		 Rectifiers 1.0 A Ultra Fast Recovery Rect
    XKB2-Z7T-WZM

    Mfr.#: XKB2-Z7T-WZM

    OMO.#: OMO-XKB2-Z7T-WZM

    		 Zigbee Development Tools (802.15.4) Zigbee Mesh Kit WorldWide
    XKB2-Z7T-WTZM

    Mfr.#: XKB2-Z7T-WTZM

    OMO.#: OMO-XKB2-Z7T-WTZM-DIGI-INTERNATIONAL

    		 XB24DZ7PIS-004/XB24DZ7RIS-004/XB24DZ7UIS-004 802.15.4 LR-WPAN XBee ZigBee Mesh Kit Development Kit
    XKB2-Z7T-WZM

    Mfr.#: XKB2-Z7T-WZM

    OMO.#: OMO-XKB2-Z7T-WZM-DIGI-INTERNATIONAL

    		 XBee S2C ZigBee Mesh Kit, worldwide
    ES1J

    Mfr.#: ES1J

    OMO.#: OMO-ES1J-ON-SEMICONDUCTOR

    		 DIODE GEN PURP 600V 1A SMA
    RC0603FR-0710KL

    Mfr.#: RC0603FR-0710KL

    OMO.#: OMO-RC0603FR-0710KL-YAGEO

    		 Thick Film Resistors - SMD 10K OHM 1%
    Disponibilidad
    Valores:
    14
    En orden:
    1997
    Ingrese la cantidad:
    El precio actual de IPD60R1K5CEAUMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,62 US$
    0,62 US$
    10
    0,52 US$
    5,21 US$
    100
    0,32 US$
    31,80 US$
    1000
    0,25 US$
    246,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
    Empezar con
    Nuevos productos
    More Newest Products
    Top