 | | | |
| PartNumber | BSZ120P03NS3 G | BSZ120P03NS3E G | BSZ120P03NS3EGATMA1 |
| Description | MOSFET P-Ch -30V -40A TSDSON-8 OptiMOS P3 | MOSFET P-Ch -30V -40A TSDSON-8 OptiMOS P3 | MOSFET P-Ch -30V -40A TSDSON-8 OptiMOS P3 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TSDSON-8 | TSDSON-8 | TSDSON-8 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | P-Channel | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | 30 V |
| Id Continuous Drain Current | 40 A | 40 A | 40 A |
| Rds On Drain Source Resistance | 9 mOhms | 9 mOhms | 9 mOhms |
| Vgs th Gate Source Threshold Voltage | 3.1 V | 3.1 V | 3.1 V |
| Vgs Gate Source Voltage | 25 V | 25 V | 25 V |
| Qg Gate Charge | 45 nC | 45 nC | 45 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 52 W | 52 W | 52 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Reel | Reel |
| Height | 1.1 mm | 1.1 mm | 1.1 mm |
| Length | 3.3 mm | 3.3 mm | 3.3 mm |
| Series | OptiMOS P3 | OptiMOS P3 | BSZ120P03 |
| Transistor Type | 1 P-Channel | 1 P-Channel | 1 P-Channel |
| Width | 3.3 mm | 3.3 mm | 3.3 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 22 S | 22 S | 22 S |
| Fall Time | 5 ns | 5 ns | 5 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 11 ns | 11 ns | 11 ns |
| Factory Pack Quantity | 5000 | 5000 | 5000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 23 ns | 23 ns | 23 ns |
| Typical Turn On Delay Time | 13 ns | 13 ns | 13 ns |
| Part # Aliases | BSZ120P03NS3GATMA1 BSZ12P3NS3GXT SP000709736 | BSZ120P03NS3EGATMA1 BSZ12P3NS3EGXT SP000709730 | BSZ120P03NS3E BSZ12P3NS3EGXT G SP000709730 |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
BSZ146N10LS5ATMA1 | MOSFET MV POWER MOS | |
| BSZ15DC02KD H | MOSFET SMALL SIGNAL+P-CH | ||
| BSZ123N08NS3 G | MOSFET N-Ch 80V 40A TSDSON-8 OptiMOS 3 | ||
| BSZ12DN20NS3 G | MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3 | ||
| BSZ15DC02KDHXTMA1 | MOSFET SMALL SIGNAL+P-CH | ||
| BSZ123N08NS3GATMA1 | MOSFET N-Ch 80V 40A TSDSON-8 OptiMOS 3 | ||
| BSZ120P03NS3GATMA1 | MOSFET P-Ch -30V -40A TSDSON-8 OptiMOS P3 | ||
| BSZ130N03MS G | MOSFET N-Ch 30V 35A TSDSON-8 OptiMOS 3M | ||
| BSZ130N03LS G | MOSFET N-Ch 30V 35A TSDSON-8 OptiMOS 3 | ||
| BSZ150N10LS3 G | MOSFET N-Ch 100V 40A TSDSON-8 | ||
| BSZ150N10LS3GATMA1 | MOSFET N-Ch 100V 40A TSDSON-8 | ||
| BSZ120P03NS3 G | MOSFET P-Ch -30V -40A TSDSON-8 OptiMOS P3 | ||
| BSZ120P03NS3E G | MOSFET P-Ch -30V -40A TSDSON-8 OptiMOS P3 | ||
| BSZ120P03NS3EGATMA1 | MOSFET P-Ch -30V -40A TSDSON-8 OptiMOS P3 | ||
| BSZ120P03NS3GATMA1 | MOSFET P-CH 30V 40A TSDSON-8 | ||
| BSZ123N08NS3GATMA1 | MOSFET N-CH 80V 40A TSDSON-8 | ||
| BSZ130N03LSGATMA1 | MOSFET N-CH 30V 35A TSDSON-8 | ||
| BSZ130N03MSGATMA1 | MOSFET N-CH 30V 35A TSDSON-8 | ||
| BSZ146N10LS5ATMA1 | MV POWER MOS | ||
| BSZ12DN20NS3GATMA1 | MOSFET N-CH 200V 11.3A 8TSDSON | ||
| BSZ120P03NS3EGATMA1 | MOSFET P-CH 30V 40A TSDSON-8 | ||
| BSZ15DC02KDHXTMA1 | MOSFET SMALL SIGNAL+P-CH | ||
| BSZ150N10LS3GATMA1 | RF Bipolar Transistors MOSFET N-Ch 100V 40A TSDSON-8 | ||
Infineon Technologies |
BSZ130N03MSGATMA1 | MOSFET LV POWER MOS | |
| BSZ120N03LSG | Nuevo y original | ||
| BSZ120P03N | Nuevo y original | ||
| BSZ120P03NS3 | Nuevo y original | ||
| BSZ120P03NS3 G | Trans MOSFET P-CH 30V 40A 8-Pin TSDSON T/R (Alt: BSZ120P03NS3 G) | ||
| BSZ120P03NS3EG | -30V,-40A,P-channel power MOSFET | ||
| BSZ120P03NS3G | Nuevo y original | ||
| BSZ120P03NS3GATMA1 , TG1 | Nuevo y original | ||
| BSZ123N08NS3 G | MOSFET N-Ch 80V 40A TSDSON-8 OptiMOS 3 | ||
| BSZ123N08NS3G | Nuevo y original | ||
| BSZ12DN20NNS3G | Nuevo y original | ||
| BSZ12DN20NS3 G | MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3 | ||
| BSZ130N03LS G | MOSFET N-Ch 30V 35A TSDSON-8 OptiMOS 3 | ||
| BSZ130N03LSG | Trans MOSFET N-CH 30V 35A 8-Pin TSDSON T/R (Alt: SP000278810) | ||
| BSZ130N03M | Nuevo y original | ||
| BSZ130N03MS | Nuevo y original | ||
| BSZ130N03MS G | Trans MOSFET N-CH 30V 9A 8-Pin TSDSON T/R - Bulk (Alt: BSZ130N03MSG) | ||
| BSZ130N03MSG | Power Field-Effect Transistor, 9A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSZ150N10LS3 G | MOSFET N-Ch 100V 40A TSDSON-8 | ||
| BSZ150N10LS3G | Trans MOSFET N-CH 100V 8A 8-Pin TSDSON | ||
| BSZ15DC02KD | Nuevo y original | ||
| BSZ15DC02KD H | MOSFET SMALL SIGNAL+P-CH | ||
| BSZ15DC02KDH | Nuevo y original | ||
| BSZ120P03NS3GATMA1-CUT TAPE | Nuevo y original | ||
| BSZ150N10LS3GATMA1-CUT TAPE | Nuevo y original | ||
| BSZ12DN20NS3G | Darlington Transistors MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3 | ||
| BSZ120P03NS3E G | RF Bipolar Transistors MOSFET P-Ch -30V -40A TSDSON-8 OptiMOS P3 |