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BSZ130N03LS G

BSZ130N03LS G
Mfr. #:
BSZ130N03LS G
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-Ch 30V 35A TSDSON-8 OptiMOS 3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BSZ130N03LS G Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
BSZ130N03LS G más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TSDSON-8
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
30 V
Id - Corriente de drenaje continua:
35 A
Rds On - Resistencia de la fuente de drenaje:
13 mOhms
Vgs - Voltaje puerta-fuente:
20 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
2.1 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
OptiMOS
Embalaje:
Carrete
Altura:
1.1 mm
Longitud:
3.3 mm
Serie:
OptiMOS 3
Tipo de transistor:
1 N-Channel
Ancho:
3.3 mm
Marca:
Infineon Technologies
Otoño:
2.4 ns
Tipo de producto:
MOSFET
Hora de levantarse:
2.6 ns
Cantidad de paquete de fábrica:
5000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
13 ns
Tiempo típico de retardo de encendido:
2.9 ns
Parte # Alias:
BSZ130N03LSGATMA1 BSZ13N3LSGXT SP000278810
Tags
BSZ130N03L, BSZ13, BSZ1, BSZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
Parte # Mfg. Descripción Valores Precio
BSZ130N03LSGATMA1
DISTI # BSZ130N03LSGATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 30V 35A TSDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		13364In Stock
  • 1000:$0.3082
  • 500:$0.3852
  • 100:$0.5200
  • 10:$0.6740
  • 1:$0.7700
BSZ130N03LSGATMA1
DISTI # BSZ130N03LSGATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 30V 35A TSDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		13364In Stock
  • 1000:$0.3082
  • 500:$0.3852
  • 100:$0.5200
  • 10:$0.6740
  • 1:$0.7700
BSZ130N03LSGATMA1
DISTI # BSZ130N03LSGATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 30V 35A TSDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		10000In Stock
  • 5000:$0.2525
BSZ130N03LSGATMA1
DISTI # SP000278810		Infineon Technologies AGTrans MOSFET N-CH 30V 35A 8-Pin TSDSON T/R (Alt: SP000278810)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Europe - 5000
  • 5000:€0.2679
  • 10000:€0.2189
  • 20000:€0.2009
  • 30000:€0.1849
  • 50000:€0.1719
BSZ130N03LSG
DISTI # BSZ130N03LS G		Infineon Technologies AGTrans MOSFET N-CH 30V 35A 8-Pin TSDSON T/R (Alt: BSZ130N03LS G)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Asia - 0
  • 5000:$0.1857
  • 10000:$0.1806
  • 15000:$0.1757
  • 25000:$0.1711
  • 50000:$0.1688
  • 125000:$0.1667
  • 250000:$0.1646
BSZ130N03LSG
DISTI # SP000278810		Infineon Technologies AGTrans MOSFET N-CH 30V 35A 8-Pin TSDSON T/R (Alt: SP000278810)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Europe - 0
  • 5000:€0.3189
  • 10000:€0.2749
  • 20000:€0.2339
  • 30000:€0.2009
  • 50000:€0.1899
BSZ130N03LSGATMA1
DISTI # BSZ130N03LSGATMA1		Infineon Technologies AGTrans MOSFET N-CH 30V 35A 8-Pin TSDSON T/R - Tape and Reel (Alt: BSZ130N03LSGATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.1949
  • 10000:$0.1879
  • 20000:$0.1819
  • 30000:$0.1749
  • 50000:$0.1719
BSZ130N03LSGATMA1
DISTI # 60R2543		Infineon Technologies AGMOSFET, N CH, 35A, 30V, PG-TSDSON-8,Transistor Polarity:N Channel,Continuous Drain Current Id:35A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0108ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:-,Power RoHS Compliant: Yes0
  • 1:$0.6760
  • 10:$0.5400
  • 100:$0.3650
  • 500:$0.3160
  • 1000:$0.2750
  • 2500:$0.2240
  • 10000:$0.2160
BSZ130N03LS G
DISTI # 726-BSZ130N03LSG		Infineon Technologies AGMOSFET N-Ch 30V 35A TSDSON-8 OptiMOS 3
RoHS: Compliant		8352
  • 1:$0.6400
  • 10:$0.5270
  • 100:$0.3400
  • 1000:$0.2720
  • 5000:$0.2300
BSZ130N03LSGInfineon Technologies AGPower Field-Effect Transistor, 10A I(D), 30V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		3430
  • 1000:$0.2200
  • 500:$0.2400
  • 100:$0.2500
  • 25:$0.2600
  • 1:$0.2800
BSZ130N03LSGATMA1Infineon Technologies AGPower Field-Effect Transistor, 10A I(D), 30V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		6507
  • 1000:$0.2100
  • 500:$0.2200
  • 100:$0.2300
  • 25:$0.2400
  • 1:$0.2600
BSZ130N03LSGATMA1
DISTI # 9062909P		Infineon Technologies AGMOSFET N-CHANNEL 30V 35A OPTIMOS TSDSON8, RL200
  • 80:£0.3140
  • 400:£0.2460
  • 800:£0.2220
  • 2000:£0.1970
BSZ130N03LSGInfineon Technologies AG 2897
    BSZ130N03LSGATMA1
    DISTI # XSKDRABS0003299    		Infineon Technologies AG 
    RoHS: Compliant    		5000
    • 5000:$0.2819
    BSZ130N03LSGATMA1
    DISTI # 1775506    		Infineon Technologies AGMOSFET, N CH, 35A, 30V, PG-TSDSON-8
    RoHS: Compliant    		4200
    • 5:£0.6440
    • 25:£0.5570
    • 100:£0.4200
    • 250:£0.3660
    • 500:£0.3120
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    Disponibilidad
    Valores:
    Available
    En orden:
    1993
    Ingrese la cantidad:
    El precio actual de BSZ130N03LS G es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,63 US$
    0,63 US$
    10
    0,53 US$
    5,27 US$
    100
    0,34 US$
    34,00 US$
    1000
    0,27 US$
    272,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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