BSZ12DN20NS3 G

Mfr. #:: BSZ12DN20NS3 G
Fabricante:: Infineon Technologies
Descripción:: MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: BSZ12DN20NS3 G Ficha de datos
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Más información:: BSZ12DN20NS3 G más información

Atributo del producto
Valor de atributo

Tags: BSZ12DN20NS, BSZ12D, BSZ12, BSZ1, BSZ

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSZ12DN20NS3 G Más información

Wireless Charging Solutions: Infineon Wireless Charging Solutions meet today's growing demand for wireless charge applications like smartphones, wearables, notebooks, and low-voltage drive devices. Infineon's highly efficient and cost-effective devices enable state-of-the-art solutions for the transmitter unit for inductive and resonant standards. Infineon devices are ready-to-use for the adapter/charger, fostering time-to-market of full wireless charging solutions. Infineon is a member of the Wireless Power Consortium and the AirFuel Alliance.

Resonant Wireless Charging - Consumer Applications: Infineon Technologies Resonant Wireless Charging - Consumer Applications takes the lead in fast switching in power transfer topologies. With the best figure of merit (FOM) for gate charge times, RDS(on) and Coss they enable 6.78MHz inverter designs. Superior power MOSFET technology addresses frequency switching implementations, especially in the 30-10V areas for class D inverter designs and in the 150-250V voltage class for class E inverter designs.

Market price

Parte #	Mfg.	Descripción	Valores	Precio
BSZ12DN20NS3GATMA1 DISTI # V72:2272_06384561	Infineon Technologies AG	Trans MOSFET N-CH 200V 11.3A 8-Pin TSDSON EP T/R RoHS: Compliant	4816	1:$0.5330
BSZ12DN20NS3GATMA1 DISTI # V36:1790_06384561	Infineon Technologies AG	Trans MOSFET N-CH 200V 11.3A 8-Pin TSDSON EP T/R RoHS: Compliant	0	5000000:$0.4159 2500000:$0.4161 500000:$0.4428 50000:$0.4905 5000:$0.4986
BSZ12DN20NS3GATMA1 DISTI # BSZ12DN20NS3GATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 200V 11.3A 8TSDSON RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	5922In Stock	1000:$0.5791 500:$0.7336 100:$0.8880 10:$1.1390 1:$1.2700
BSZ12DN20NS3GATMA1 DISTI # BSZ12DN20NS3GATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 200V 11.3A 8TSDSON RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	5922In Stock	1000:$0.5791 500:$0.7336 100:$0.8880 10:$1.1390 1:$1.2700
BSZ12DN20NS3GATMA1 DISTI # BSZ12DN20NS3GATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 200V 11.3A 8TSDSON RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	5000In Stock	10000:$0.4798 5000:$0.4985
BSZ12DN20NS3 G DISTI # 32907815	Infineon Technologies AG	0	5000	17:$1.5375
BSZ12DN20NS3GATMA1 DISTI # 33936972	Infineon Technologies AG	Trans MOSFET N-CH 200V 11.3A 8-Pin TSDSON EP T/R RoHS: Compliant	4816	15:$0.5330
BSZ12DN20NS3GATMA1 DISTI # BSZ12DN20NS3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 200V 11.3A 8-Pin TSDSON T/R - Bulk (Alt: BSZ12DN20NS3GATMA1) RoHS: Compliant Min Qty: 782 Container: Bulk	Americas - 0	7820:$0.4059 3910:$0.4129 2346:$0.4279 1564:$0.4439 782:$0.4609
BSZ12DN20NS3GATMA1 DISTI # BSZ12DN20NS3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 200V 11.3A 8-Pin TSDSON T/R - Tape and Reel (Alt: BSZ12DN20NS3GATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	50000:$0.4529 30000:$0.4609 20000:$0.4769 10000:$0.4949 5000:$0.5139
BSZ12DN20NS3GATMA1 DISTI # BSZ12DN20NS3 G	Infineon Technologies AG	Trans MOSFET N-CH 200V 11.3A 8-Pin TSDSON T/R (Alt: BSZ12DN20NS3 G) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel	Asia - 0	250000:$0.4519 125000:$0.4577 50000:$0.4636 25000:$0.4697 15000:$0.4824 10000:$0.4958 5000:$0.5100
BSZ12DN20NS3GATMA1 DISTI # BSZ12DN20NS3G	Infineon Technologies AG	Trans MOSFET N-CH 200V 11.3A 8-Pin TSDSON T/R - Bulk (Alt: BSZ12DN20NS3G) RoHS: Not Compliant Min Qty: 758 Container: Bulk	Americas - 0	7580:$0.4569 3790:$0.4649 2274:$0.4809 1516:$0.4999 758:$0.5179
BSZ12DN20NS3GATMA1 DISTI # SP000781784	Infineon Technologies AG	Trans MOSFET N-CH 200V 11.3A 8-Pin TSDSON T/R (Alt: SP000781784) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel	Europe - 0	50000:€0.4159 30000:€0.4479 20000:€0.4849 10000:€0.5289 5000:€0.6469
BSZ12DN20NS3GATMA1 DISTI # 13AC8354	Infineon Technologies AG	MOSFET, N-CH, 200V, 11.3A, TSDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:11.3A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.108ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes	779	1000:$0.6120 500:$0.7760 250:$0.8880 100:$1.0000 50:$1.0900 25:$1.1800 10:$1.2700 1:$1.4300
BSZ12DN20NS3 G DISTI # 726-BSZ12DN20NS3G	Infineon Technologies AG	MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3 RoHS: Compliant	13365	1:$1.1700 10:$1.0000 100:$0.7680 500:$0.6790 1000:$0.5360 5000:$0.4750
BSZ12DN20NS3G	Infineon Technologies AG	Power Field-Effect Transistor, 11.3A I(D), 200V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	14295	1000:$0.4700 500:$0.5000 100:$0.5200 25:$0.5400 1:$0.5800
BSZ12DN20NS3GATMA1	Infineon Technologies AG	Power Field-Effect Transistor, 11.3A I(D), 200V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	70155	1000:$0.4200 500:$0.4400 100:$0.4600 25:$0.4800 1:$0.5200
BSZ12DN20NS3GATMA1 DISTI # 8259257P	Infineon Technologies AG	MOSFET N-CH 11.3A 200V OPTIMOS3 TSDSON8, RL	3720	100:£0.3740
BSZ12DN20NS3GATMA1 DISTI # 2725826	Infineon Technologies AG	MOSFET, N-CH, 200V, 11.3A, TSDSON	5808	500:£0.6170 250:£0.7070 100:£0.7970 10:£1.0600 1:£1.3100
BSZ12DN20NS3 G DISTI # C1S322000454510	Infineon Technologies AG	Trans MOSFET N-CH 200V 11.3A 8-Pin TSDSON EP T/R RoHS: Compliant	5000	5000:$0.4900 1000:$0.5570 500:$0.5930 200:$0.6410 100:$0.6750 50:$0.7910 10:$0.9290 5:$1.2300
BSZ12DN20NS3GATMA1 DISTI # 2725826	Infineon Technologies AG	MOSFET, N-CH, 200V, 11.3A, TSDSON RoHS: Compliant	719	1000:$0.9270 500:$1.1800 100:$1.5200 10:$1.9200 1:$2.1700

Productos relacionados

Imagen	Parte #	Descripción
	Mfr.#: BSZ12DN20NS3 G OMO.#: OMO-BSZ12DN20NS3-G	MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3
	Mfr.#: BSZ12DN20NNS3G OMO.#: OMO-BSZ12DN20NNS3G-1190	Nuevo y original
	Mfr.#: BSZ12DN20NS3 G OMO.#: OMO-BSZ12DN20NS3-G-1190	MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3
	Mfr.#: BSZ12DN20NS3GATMA1 OMO.#: OMO-BSZ12DN20NS3GATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 200V 11.3A 8TSDSON
	Mfr.#: BSZ12DN20NS3G OMO.#: OMO-BSZ12DN20NS3G-124	Darlington Transistors MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3

Disponibilidad

Valores:: Available
En orden:: 4000
Ingrese la cantidad:

El precio actual de BSZ12DN20NS3 G es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~0,69 US$~~; ~~0,69 US$~~

10: ~~0,65 US$~~; ~~6,51 US$~~

100: ~~0,62 US$~~; ~~61,70 US$~~

500: ~~0,58 US$~~; ~~291,35 US$~~

1000: ~~0,55 US$~~; ~~548,40 US$~~

Empezar con

BSZ12DN20NS 3
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BSZ1 94
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More Newest Products

BSZ12DN20NS3 G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes