BSZ146N10LS5ATMA1

BSZ146N10LS5ATMA1
Mfr. #:
BSZ146N10LS5ATMA1
Fabricante:
Infineon Technologies
Descripción:
MV POWER MOS
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BSZ146N10LS5ATMA1 Ficha de datos
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ECAD Model:
Atributo del producto
Valor de atributo
Tags
BSZ1, BSZ
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 100 V 14.6 mOhm 40 A OptiMOS™ Power Mosfet - PG-TSDSON-8 FL
***ical
MOSFET OptiMOSTM5Power-Transistor,100V F
***ark
Mosfet, N-Ch, 100V, 40A, 150Deg C, 52W Rohs Compliant: Yes
***ineon
Infineon's new logic level OptiMOS 5 power MOSFETs are highly suitable for wireless charging, adapter and telecom applications. The new devices' low gate charge (Q g) reduces switching losses without compromising conduction losses. The improved figues of merit allow operations at high switching frequencies. Furthermore, the logic level drive provides a low gate threshold voltage (V GS(th)) allowing the MOSFETs to be driven at 5V and directly from microcontrollers. | Summary of Features: Low R DS(on) in small package; Low gate charge; Lower output charge; Logic level compatibility | Benefits: Higher power density designs; Higher switching frequency; Reduced parts count wherever 5V supplies are available; Driven directly from microcontrollers (slow switching); System cost reduction | Target Applications: Wireless charging; Adapter; Telecom
Parte # Mfg. Descripción Valores Precio
BSZ146N10LS5ATMA1
DISTI # 31443051
Infineon Technologies AGMOSFET OptiMOSTM5Power-Transistor,100V F
RoHS: Compliant
5000
  • 5000:$0.5011
BSZ146N10LS5ATMA1
DISTI # BSZ146N10LS5ATMA1-ND
Infineon Technologies AGMV POWER MOS
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 5000:$0.5702
BSZ146N10LS5ATMA1
DISTI # V36:1790_16563289
Infineon Technologies AGMOSFET OptiMOSTM5Power-Transistor,100V F
RoHS: Compliant
0
  • 5000000:$0.4949
  • 2500000:$0.4950
  • 500000:$0.5041
  • 50000:$0.5178
  • 5000:$0.5200
BSZ146N10LS5ATMA1
DISTI # BSZ146N10LS5ATMA1
Infineon Technologies AGDIFFERENTIATED MOSFETS - Tape and Reel (Alt: BSZ146N10LS5ATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 0
  • 50000:$0.5179
  • 30000:$0.5279
  • 20000:$0.5459
  • 10000:$0.5669
  • 5000:$0.5879
BSZ146N10LS5ATMA1
DISTI # SP001385466
Infineon Technologies AGDIFFERENTIATED MOSFETS (Alt: SP001385466)
RoHS: Compliant
Min Qty: 5000
Europe - 0
  • 50000:€0.5039
  • 30000:€0.5379
  • 20000:€0.6179
  • 10000:€0.7399
  • 5000:€0.8819
BSZ146N10LS5ATMA1
DISTI # 726-BSZ146N10LS5ATMA
Infineon Technologies AGMOSFET MV POWER MOS
RoHS: Compliant
4905
  • 1:$1.3400
  • 10:$1.1400
  • 100:$0.8780
  • 500:$0.7760
  • 1000:$0.6130
  • 5000:$0.5440
  • 10000:$0.5230
Imagen Parte # Descripción
BSZ146N10LS5ATMA1

Mfr.#: BSZ146N10LS5ATMA1

OMO.#: OMO-BSZ146N10LS5ATMA1

MOSFET MV POWER MOS
BSZ146N10LS5ATMA1

Mfr.#: BSZ146N10LS5ATMA1

OMO.#: OMO-BSZ146N10LS5ATMA1-INFINEON-TECHNOLOGIES

MV POWER MOS
Disponibilidad
Valores:
Available
En orden:
2500
Ingrese la cantidad:
El precio actual de BSZ146N10LS5ATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,00 US$
0,00 US$
10
0,00 US$
0,00 US$
100
0,00 US$
0,00 US$
500
0,00 US$
0,00 US$
1000
0,00 US$
0,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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