A2G22 stock, A2G22, A2G22S251-01SR3


PartNumber	A2G22S251-01SR3	A2G22S160-01SR3	A2G22S190-01SR3
Description	RF Amplifier A2G22S251-01S/CFM2F///REEL 13 Q2 DP	RF JFET Transistors Airfast RF Power GaN Transistor, 1800-2200 MHz, 32 W Avg., 48 V	RF MOSFET Transistors Airfast RF Power GaN Transistor, 1800-2200 MHz, 36 W Avg., 48 V
Manufacturer	NXP	NXP	NXP
Product Category	RF Amplifier	RF JFET Transistors	RF MOSFET Transistors
Packaging	Reel	Reel	Reel
Brand	NXP / Freescale	NXP / Freescale	NXP Semiconductors
Product Type	RF Amplifier	RF JFET Transistors	RF MOSFET Transistors
Factory Pack Quantity	250	250	250
Subcategory	Wireless & RF Integrated Circuits	Transistors	MOSFETs
Part # Aliases	935313179528	935312929118	935372783118
Unit Weight	0 oz	0.089430 oz	-
RoHS	-	Y	Y
Technology	-	Si	GaN Si
Transistor Polarity	-	-	N-Channel
Id Continuous Drain Current	-	-	19 mA
Vds Drain Source Breakdown Voltage	-	-	150 V
Gain	-	-	16.5 dB
Minimum Operating Temperature	-	-	- 55 C
Maximum Operating Temperature	-	-	+ 150 C
Mounting Style	-	-	SMD/SMT
Package / Case	-	-	NI-400S-2
Operating Frequency	-	-	1800 MHz to 2200 MHz
Series	-	-	A2G22S190
Type	-	-	RF Power MOSFET
Number of Channels	-	-	1 Channel
Vgs Gate Source Voltage	-	-	- 8 V
Vgs th Gate Source Threshold Voltage	-	-	- 2.3 V

Search Part Number : "A2G22", Match & Start with "A2G22" - Total : 10

Fabricante	Parte #	Descripción
NXP / Freescale	A2G22S251-01SR3	RF Amplifier A2G22S251-01S/CFM2F///REEL 13 Q2 DP
NXP / Freescale	A2G22S160-01SR3	RF JFET Transistors Airfast RF Power GaN Transistor, 1800-2200 MHz, 32 W Avg., 48 V
NXP Semiconductors	A2G22S190-01SR3	RF MOSFET Transistors Airfast RF Power GaN Transistor, 1800-2200 MHz, 36 W Avg., 48 V
	A2G22S160-01SR3	IC TRANS RF LDMOS
	A2G22S251-01SR3	RF Amplifier AIRFAST RF Power GaN Transistor, 2300-2690 MHz, 60 W AVG., 48 V
	A2G22S160	Nuevo y original
	A2G22S160--01SR3	Nuevo y original
	A2G22S160-01S	Nuevo y original
	A2G22S251	Nuevo y original
	A2G22S251-01S	Nuevo y original

A2G22