A2G22S251-01SR3

A2G22S251-01SR3
Mfr. #:
A2G22S251-01SR3
Fabricante:
NXP Semiconductors
Descripción:
RF Amplifier AIRFAST RF Power GaN Transistor, 2300-2690 MHz, 60 W AVG., 48 V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
A2G22S251-01SR3 Ficha de datos
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Más información:
A2G22S251-01SR3 más información A2G22S251-01SR3 Product Details
Atributo del producto
Valor de atributo
Tags
A2G22S2, A2G22, A2G2, A2G
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
RF Power GaN Transistor 1800-2200MHz 48V 51dBm 125W 32W AVG W-CDMA 19.6dB@2110MHz
***ark
Airfast Rf Power Gan Transistor, 2300-2690 Mhz, 60 W Avg., 48 V
***W
RF Power Transistor,1805 to 2200 MHz, 158 W, Typ Gain in dB is 17.7 @ 2170 MHz, 48 V, GaN, SOT1828
NXP RF-IF Solutions
NXP RF-IF Solutions meet the needs of the most demanding RF applications by allowing designers to meet the highest specifications for performance while still retaining potential trade-offs with respect to efficiency, power, ruggedness, consistency, and integration levels. The NXP RF-IF portfolio covers the majority of communication and transmission systems, making it easy to find a solution that matches a designer's particular requirements. NXP RF-IF solutions include the SA6xx Series RF/IF building blocks that are ideal for a variety of niche handheld RF products. Available in small-footprint packages, SA6xx solutions save PCB space while providing better RF performance.Learn More
RF Power GaN Portfolio
NXP Semiconductors RF Power Gallium Nitride (GaN) Portfolio provides state of the art linearizability and RF performance that enables 5G deployment. These transistors offer solutions for cellular infrastructure, defense, and industrial markets. The GaN transistors provide wideband performance and high-frequency operation. These transistors feature end-to-end applications, solution support, and high-volume production. The GaN transistors come with advanced GaN on SiC technology that offers high power density. These transistors are designed for cellular base station applications.
Parte # Mfg. Descripción Valores Precio
A2G22S251-01SR3
DISTI # A2G22S251-01SR3-ND
NXP SemiconductorsAIRFAST RF POWER GAN TRANSISTOR
RoHS: Not compliant
Min Qty: 250
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 250:$114.9059
A2G22S251-01SR3
DISTI # A2G22S251-01SR3
NXP SemiconductorsRF Power GaN Transistor 1800-2200MHz 48V 51dBm 125W 32W AVG W-CDMA 19.6dB@2110MHz - Tape and Reel (Alt: A2G22S251-01SR3)
RoHS: Compliant
Min Qty: 250
Container: Reel
Americas - 0
  • 250:$125.8900
  • 500:$120.9900
  • 1000:$116.1900
  • 1500:$111.9900
  • 2500:$109.8900
A2G22S251-01SR3
DISTI # 841-A2G22S25A3A5641
NXP SemiconductorsRF Amplifier Airfast RF Power GaN Transistor, 1805-2200 MHz, 48 W Avg., 48 V
RoHS: Compliant
0
  • 250:$129.5900
A2G22S251-01SR3
DISTI # A2G22S251-01SR3
NXP SemiconductorsRF POWER TRANSISTOR
RoHS: Compliant
138
  • 1:$148.7100
  • 10:$137.4500
  • 25:$133.4000
Imagen Parte # Descripción
A2G22S251-01SR3

Mfr.#: A2G22S251-01SR3

OMO.#: OMO-A2G22S251-01SR3

RF Amplifier A2G22S251-01S/CFM2F///REEL 13 Q2 DP
A2G22S251-01SR3

Mfr.#: A2G22S251-01SR3

OMO.#: OMO-A2G22S251-01SR3-NXP-SEMICONDUCTORS

RF Amplifier AIRFAST RF Power GaN Transistor, 2300-2690 MHz, 60 W AVG., 48 V
A2G22S251

Mfr.#: A2G22S251

OMO.#: OMO-A2G22S251-1190

Nuevo y original
A2G22S251-01S

Mfr.#: A2G22S251-01S

OMO.#: OMO-A2G22S251-01S-1190

Nuevo y original
Disponibilidad
Valores:
Available
En orden:
5500
Ingrese la cantidad:
El precio actual de A2G22S251-01SR3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
164,84 US$
164,84 US$
10
156,59 US$
1 565,93 US$
100
148,35 US$
14 835,15 US$
500
140,11 US$
70 054,90 US$
1000
131,87 US$
131 868,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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