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| PartNumber | A2G22S251-01SR3 | A2G22S160-01SR3 | A2G22S190-01SR3 |
| Description | RF Amplifier A2G22S251-01S/CFM2F///REEL 13 Q2 DP | RF JFET Transistors Airfast RF Power GaN Transistor, 1800-2200 MHz, 32 W Avg., 48 V | RF MOSFET Transistors Airfast RF Power GaN Transistor, 1800-2200 MHz, 36 W Avg., 48 V |
| Manufacturer | NXP | NXP | NXP |
| Product Category | RF Amplifier | RF JFET Transistors | RF MOSFET Transistors |
| Packaging | Reel | Reel | Reel |
| Brand | NXP / Freescale | NXP / Freescale | NXP Semiconductors |
| Product Type | RF Amplifier | RF JFET Transistors | RF MOSFET Transistors |
| Factory Pack Quantity | 250 | 250 | 250 |
| Subcategory | Wireless & RF Integrated Circuits | Transistors | MOSFETs |
| Part # Aliases | 935313179528 | 935312929118 | 935372783118 |
| Unit Weight | 0 oz | 0.089430 oz | - |
| RoHS | - | Y | Y |
| Technology | - | Si | GaN Si |
| Transistor Polarity | - | - | N-Channel |
| Id Continuous Drain Current | - | - | 19 mA |
| Vds Drain Source Breakdown Voltage | - | - | 150 V |
| Gain | - | - | 16.5 dB |
| Minimum Operating Temperature | - | - | - 55 C |
| Maximum Operating Temperature | - | - | + 150 C |
| Mounting Style | - | - | SMD/SMT |
| Package / Case | - | - | NI-400S-2 |
| Operating Frequency | - | - | 1800 MHz to 2200 MHz |
| Series | - | - | A2G22S190 |
| Type | - | - | RF Power MOSFET |
| Number of Channels | - | - | 1 Channel |
| Vgs Gate Source Voltage | - | - | - 8 V |
| Vgs th Gate Source Threshold Voltage | - | - | - 2.3 V |