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A2G22S190-01SR3

A2G22S190-01SR3
Mfr. #:
A2G22S190-01SR3
Fabricante:
NXP Semiconductors
Descripción:
RF MOSFET Transistors Airfast RF Power GaN Transistor, 1800-2200 MHz, 36 W Avg., 48 V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
A2G22S190-01SR3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
A2G22S190-01SR3 más información A2G22S190-01SR3 Product Details
Atributo del producto
Valor de atributo
Fabricante:
NXP
Categoria de producto:
Transistores RF MOSFET
RoHS:
Y
Polaridad del transistor:
Canal N
Tecnología:
GaN Si
Id - Corriente de drenaje continua:
19 mA
Vds - Voltaje de ruptura de drenaje-fuente:
150 V
Ganar:
16.5 dB
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Estilo de montaje:
SMD / SMT
Paquete / Caja:
NI-400S-2
Embalaje:
Carrete
Frecuencia de operación:
1800 MHz to 2200 MHz
Serie:
A2G22S190
Escribe:
RF Power MOSFET
Marca:
Semiconductores NXP
Número de canales:
1 Channel
Tipo de producto:
Transistores RF MOSFET
Cantidad de paquete de fábrica:
250
Subcategoría:
MOSFET
Vgs - Voltaje puerta-fuente:
- 8 V
Vgs th - Voltaje umbral puerta-fuente:
- 2.3 V
Parte # Alias:
935372783118
Tags
A2G22S1, A2G22, A2G2, A2G
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
RF Power GaN Portfolio
NXP Semiconductors RF Power Gallium Nitride (GaN) Portfolio provides state of the art linearizability and RF performance that enables 5G deployment. These transistors offer solutions for cellular infrastructure, defense, and industrial markets. The GaN transistors provide wideband performance and high-frequency operation. These transistors feature end-to-end applications, solution support, and high-volume production. The GaN transistors come with advanced GaN on SiC technology that offers high power density. These transistors are designed for cellular base station applications.
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A2G22S190-01SR3

Mfr.#: A2G22S190-01SR3

OMO.#: OMO-A2G22S190-01SR3

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Disponibilidad
Valores:
Available
En orden:
2000
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