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A2G22S160-01SR3

A2G22S160-01SR3
Mfr. #:
A2G22S160-01SR3
Fabricante:
NXP / Freescale
Descripción:
RF JFET Transistors Airfast RF Power GaN Transistor, 1800-2200 MHz, 32 W Avg., 48 V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
A2G22S160-01SR3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
A2G22S160-01SR3 más información
Atributo del producto
Valor de atributo
Fabricante:
NXP
Categoria de producto:
Transistores RF JFET
RoHS:
Y
Tecnología:
Si
Embalaje:
Carrete
Marca:
NXP / Freescale
Tipo de producto:
Transistores RF JFET
Cantidad de paquete de fábrica:
250
Subcategoría:
Transistores
Parte # Alias:
935312929118
Unidad de peso:
0.089430 oz
Tags
A2G22S160-0, A2G22S16, A2G22S1, A2G22, A2G2, A2G
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Electronic Components
RF JFET Transistors Airfast RF Power GaN Transistor, 1800-2200 MHz, 32 W Avg., 48 V
***W
RF Power Transistor,1800 to 2200 MHz, 125 W, Typ Gain in dB is 19.6 @ 2110 MHz, 48 V, GaN, SOT1828
***el Electronic
IC DAC 16BIT V-OUT 16TSSOP
***et
GAN 2.2GHZ 160W NI400S-2
***hardson RFPD
RF POWER TRANSISTOR
***i-Key
IC TRANS RF LDMOS
RF Power GaN Portfolio
NXP Semiconductors RF Power Gallium Nitride (GaN) Portfolio provides state of the art linearizability and RF performance that enables 5G deployment. These transistors offer solutions for cellular infrastructure, defense, and industrial markets. The GaN transistors provide wideband performance and high-frequency operation. These transistors feature end-to-end applications, solution support, and high-volume production. The GaN transistors come with advanced GaN on SiC technology that offers high power density. These transistors are designed for cellular base station applications.
Parte # Mfg. Descripción Valores Precio
A2G22S160-01SR3
DISTI # A2G22S160-01SR3-ND		NXP SemiconductorsIC TRANS RF LDMOS
RoHS: Compliant
Min Qty: 250
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 250:$115.1477
A2G22S160-01SR3
DISTI # A2G22S160-01SR3		Avnet, Inc.GAN 2.2GHZ 160W NI400S-2 - Tape and Reel (Alt: A2G22S160-01SR3)
RoHS: Compliant
Min Qty: 250
Container: Reel		Americas - 0
  • 250:$126.1900
  • 500:$121.1900
  • 1000:$116.4900
  • 1500:$112.1900
  • 2500:$110.0900
A2G22S160-01SR3
DISTI # A2G22S160-01SR3		Avnet, Inc.GAN 2.2GHZ 160W NI400S-2 (Alt: A2G22S160-01SR3)
RoHS: Compliant
Min Qty: 250		Europe - 0
  • 250:€128.7900
  • 500:€123.6900
  • 1000:€118.8900
  • 1500:€110.3900
  • 2500:€103.0900
A2G22S160-01SR3
DISTI # 51Y5359		NXP SemiconductorsAIRFAST RF POWER GAN TRANSISTOR, 1800-2200 MHZ, 32 W AVG., 48 V REEL 13" Q1 NDP0
  • 100:$108.2300
  • 50:$115.1500
  • 25:$116.8800
  • 10:$118.6100
  • 5:$122.0800
  • 1:$125.5400
A2G22S160-01SR3
DISTI # 841-A2G22S160-01SR3		NXP SemiconductorsRF JFET Transistors A2G22S160-01S/CFM2F///REEL 13 Q1 NDP
RoHS: Compliant		0
  • 250:$112.5600
A2G22S160-01SR3
DISTI # A2G22S160-01SR3		NXP SemiconductorsRF POWER TRANSISTOR
RoHS: Compliant		0
  • 250:$129.8700
Imagen Parte # Descripción
A2G22S160-01SR3

Mfr.#: A2G22S160-01SR3

OMO.#: OMO-A2G22S160-01SR3

 RF JFET Transistors Airfast RF Power GaN Transistor, 1800-2200 MHz, 32 W Avg., 48 V
A2G22S190-01SR3

Mfr.#: A2G22S190-01SR3

OMO.#: OMO-A2G22S190-01SR3

 RF MOSFET Transistors Airfast RF Power GaN Transistor, 1800-2200 MHz, 36 W Avg., 48 V
A2G22S160-01SR3

Mfr.#: A2G22S160-01SR3

OMO.#: OMO-A2G22S160-01SR3-NXP-SEMICONDUCTORS

 IC TRANS RF LDMOS
A2G22S160

Mfr.#: A2G22S160

OMO.#: OMO-A2G22S160-1190

 Nuevo y original
A2G22S160--01SR3

Mfr.#: A2G22S160--01SR3

OMO.#: OMO-A2G22S160--01SR3-1190

 Nuevo y original
A2G22S160-01S

Mfr.#: A2G22S160-01S

OMO.#: OMO-A2G22S160-01S-1190

 Nuevo y original
Disponibilidad
Valores:
Available
En orden:
5000
Ingrese la cantidad:
El precio actual de A2G22S160-01SR3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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