SI2333CDS-T

SI2333CDS-T1-E3 vs SI2333CDS-T1-GE3

 
PartNumberSI2333CDS-T1-E3SI2333CDS-T1-GE3
DescriptionMOSFET 12V 5.1A 2.5W 35mohm @ 4.5VMOSFET 12V 5.1A 2.5W 35 mohms @ 4.5V
ManufacturerVishayVishay
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CaseSOT-23-3SOT-23-3
Number of Channels1 Channel1 Channel
Transistor PolarityP-ChannelP-Channel
Vds Drain Source Breakdown Voltage12 V12 V
Id Continuous Drain Current7.1 A7.1 A
Rds On Drain Source Resistance35 mOhms35 mOhms
Vgs th Gate Source Threshold Voltage400 mV400 mV
Vgs Gate Source Voltage4.5 V4.5 V
Qg Gate Charge15 nC15 nC
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C
Pd Power Dissipation2.5 W2.5 W
ConfigurationSingleSingle
Channel ModeEnhancementEnhancement
TradenameTrenchFETTrenchFET
PackagingReelReel
Height1.45 mm1.45 mm
Length2.9 mm2.9 mm
SeriesSI2SI2
Transistor Type1 P-Channel1 P-Channel
Width1.6 mm1.6 mm
BrandVishay / SiliconixVishay / Siliconix
Forward Transconductance Min18.5 S18.5 S
Fall Time12 ns12 ns
Product TypeMOSFETMOSFET
Rise Time35 ns35 ns
Factory Pack Quantity30003000
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time45 ns45 ns
Typical Turn On Delay Time13 ns13 ns
Part # AliasesSI2333CDS-E3SI2333CDS-GE3
Unit Weight0.000282 oz0.000282 oz
Fabricante Parte # Descripción RFQ
Vishay / Siliconix
Vishay / Siliconix
SI2333CDS-T1-E3 MOSFET 12V 5.1A 2.5W 35mohm @ 4.5V
SI2333CDS-T1-GE3 MOSFET 12V 5.1A 2.5W 35 mohms @ 4.5V
Vishay
Vishay
SI2333CDS-T1-E3 MOSFET P-CH 12V 7.1A SOT23-3
SI2333CDS-T1-GE3 MOSFET P-CH 12V 7.1A SOT-23
SI2333CDS-T1-GE3/O3XXX Nuevo y original
SI2333CDS-TI-E3 Nuevo y original
SI2333CDS-TI-GE3 Nuevo y original
SI2333CDS-T1-E3-CUT TAPE Nuevo y original
SI2333CDS-T1-GE3-CUT TAPE Nuevo y original
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