SI2333C

SI2333CDS-T1-E3 vs SI2333CDS vs SI2333CDS , MAX6463XR16

 
PartNumberSI2333CDS-T1-E3SI2333CDSSI2333CDS , MAX6463XR16
DescriptionMOSFET 12V 5.1A 2.5W 35mohm @ 4.5V
ManufacturerVishay--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-23-3--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage12 V--
Id Continuous Drain Current7.1 A--
Rds On Drain Source Resistance35 mOhms--
Vgs th Gate Source Threshold Voltage400 mV--
Vgs Gate Source Voltage4.5 V--
Qg Gate Charge15 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2.5 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameTrenchFET--
PackagingReel--
Height1.45 mm--
Length2.9 mm--
SeriesSI2--
Transistor Type1 P-Channel--
Width1.6 mm--
BrandVishay / Siliconix--
Forward Transconductance Min18.5 S--
Fall Time12 ns--
Product TypeMOSFET--
Rise Time35 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time45 ns--
Typical Turn On Delay Time13 ns--
Part # AliasesSI2333CDS-E3--
Unit Weight0.000282 oz--
Fabricante Parte # Descripción RFQ
Vishay / Siliconix
Vishay / Siliconix
SI2333CDS-T1-E3 MOSFET 12V 5.1A 2.5W 35mohm @ 4.5V
SI2333CDS-T1-GE3 MOSFET 12V 5.1A 2.5W 35 mohms @ 4.5V
SI2333CDS Nuevo y original
SI2333CDS , MAX6463XR16 Nuevo y original
SI2333CDS-T1-GE3/O3XXX Nuevo y original
SI2333CDS-TI-E3 Nuevo y original
SI2333CDS-TI-GE3 Nuevo y original
SI2333CDS-T1-E3-CUT TAPE Nuevo y original
SI2333CDS-T1-GE3-CUT TAPE Nuevo y original
Vishay
Vishay
SI2333CDS-T1-E3 MOSFET P-CH 12V 7.1A SOT23-3
SI2333CDS-T1-GE3 MOSFET P-CH 12V 7.1A SOT-23
Top