 |  | | |
| PartNumber | NE3512S02-A | NE3512S02 | NE3512S02-T1 |
| Description | RF JFET Transistors C to Ku Band Super Low Noise Amp N-Ch | ||
| Manufacturer | CEL | NEC | NEC |
| Product Category | RF JFET Transistors | IC Chips | RF FETs |
| RoHS | Y | - | - |
| Transistor Type | HFET | - | HFET |
| Technology | GaAs | - | GaAs |
| Gain | 13.5 dB | - | 13.5 dB |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 4 V | - | - |
| Vgs Gate Source Breakdown Voltage | - 3 V | - | - |
| Id Continuous Drain Current | 70 mA | - | - |
| Maximum Operating Temperature | + 125 C | - | + 125 C |
| Pd Power Dissipation | 165 mW | - | - |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | S0-2 | - | - |
| Operating Frequency | 12 GHz | - | 12 GHz |
| Product | RF JFET | - | - |
| Type | GaAs HFET | - | - |
| Brand | CEL | - | - |
| Forward Transconductance Min | 55 mS | - | - |
| Gate Source Cutoff Voltage | 4 V | - | - |
| NF Noise Figure | 0.35 dB | - | - |
| Product Type | RF JFET Transistors | - | - |
| Factory Pack Quantity | 1 | - | - |
| Subcategory | Transistors | - | - |
| Packaging | - | - | Reel |
| Package Case | - | - | S0-2 |
| Pd Power Dissipation | - | - | 165 mW |
| Id Continuous Drain Current | - | - | 70 mA |
| Vds Drain Source Breakdown Voltage | - | - | 4 V |
| Forward Transconductance Min | - | - | 55 mS |
| Vgs Gate Source Breakdown Voltage | - | - | - 3 V |
| NF Noise Figure | - | - | 0.35 dB |