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SIZ904DT-T1-GE3

SIZ904DT-T1-GE3
Mfr. #:
SIZ904DT-T1-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIZ904DT-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIZ904DT-T1-GE3 DatasheetSIZ904DT-T1-GE3 Datasheet (P4-P6)SIZ904DT-T1-GE3 Datasheet (P7-P9)SIZ904DT-T1-GE3 Datasheet (P10-P12)SIZ904DT-T1-GE3 Datasheet (P13-P14)
ECAD Model:
Más información:
SIZ904DT-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
PowerPAIR-6x5-8
Número de canales:
2 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
30 V
Id - Corriente de drenaje continua:
12 A, 16 A
Rds On - Resistencia de la fuente de drenaje:
24 mOhms, 13.5 mOhms
Vgs th - Voltaje umbral puerta-fuente:
1 V, 1.2 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
12 nC, 23 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
20 W, 33 W
Configuración:
Doble
Modo de canal:
Mejora
Nombre comercial:
TrenchFET
Embalaje:
Carrete
Serie:
TAMAÑO
Tipo de transistor:
2 N-Channel
Marca:
Vishay / Siliconix
Transconductancia directa - Mín .:
17 S, 24 S
Otoño:
10 ns
Tipo de producto:
MOSFET
Hora de levantarse:
12 ns
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
13 ns
Tiempo típico de retardo de encendido:
15 ns
Parte # Alias:
SIZ904DT-GE3
Tags
SIZ904, SIZ90, SIZ9, SiZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
SIZ904DT-T1-GE3 Dual N-channel MOSFET Transistor; 9.5A; 14.5A; 30V; 8-Pin PowerPAIR
***et
Transistor MOSFET Array Dual N-CH 30V 12A/16A 8-Pin PowerPAIR T/R
***ure Electronics
Dual N Channel 30 V 0.024/0.0135 O 3.8/7.3 nC Power Mosfet - PowerPAIR 6 x 5
***ure Electronics
SiS412DN Series N-Channel 30 V 24 mOhms SMT Power Mosfet - PowerPAK-1212-8
***ark
Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:12A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V; Power Dissipation:15.6W; No. of Pins:8Pins RoHS Compliant: No
***ment14 APAC
MOSFET, N-CH, 30V, 12A, POWERPAK8; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:30V; On Resistance Rds(on):20mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:15.6W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:12A; Power Dissipation Pd:15.6W; Voltage Vgs Max:20V
***et
Transistor MOSFET Array Dual N-Channel 30V 9.4A/14A 6-Pin PowerPAIR
***el Electronic
MOSFET 30V 12/16A 20/30W 24/13.5mohm @ 10V
***i-Key
MOSFET 2N-CH 30V 12A PPAK 1212-8
***S
French Electronic Distributor since 1988
***enic
PowerPAIR-6x3.7-6 MOSFETs ROHS
***ment14 APAC
N CHANNEL MOSFET, 30V, 16A; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:30V; On Resistance Rds(on):13.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V
***Yang
Transistor MOSFET Array Dual N-CH 30V 23A/45A 8-Pin Power 33 T/R - Tape and Reel
***emi
Dual N-Channel PowerTrench® MOSFET 30V, 9.5mΩ and 20mΩ
*** Source Electronics
MOSFET 2N-CH 30V 8A/12A POWER33 / Trans MOSFET N-CH Si 30V 18A 8-Pin WDFN EP T/R
***ment14 APAC
MOSFET,NN CH,30V,18A,POWER33; Module Configuration:Dual; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):7.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V; Power Dissipation Pd:2.2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 33; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:12A; Power Dissipation Pd:2.2W
***rchild Semiconductor
This device includes two specialized N-channel MOSFETs in a dual Power33 (3mm x 3mm MLP) package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous MOSFET (Q2) have been designed to provide optimal power efficiency.
***Yang
Transistor MOSFET Array Dual N-CH 30V 23A/46A 8-Pin Power 33 T/R - Tape and Reel
***emi
Dual N-Channel PowerTrench® MOSFET 30V, 10mΩ, 20mΩ
***ark
DUAL N CH MOSFET, POWERTRENCH, 30V, 18A, POWER33; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:8.5A; Drain Source Voltage Vds, N Channel:30V; On Resistance Rds(on), N Channel:0.0078ohm
***rchild Semiconductor
This device includes two specialized N-Channel MOSFETs in a due power33(3mm X 3mm MLP) package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous MOSFET (Q2) have been designed to provide optimal power efficiency.
***nell
MOSFET, NN CH, 30V, 18A/13A, POWER33; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.016ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V; Power Dissipation Pd:1.9W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 33; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***ical
Trans MOSFET N-CH 30V 15A 8-Pin QFN EP T/R
***peria
PSMN017-30LL - N-channel DFN3333-8 30 V 17 mΩ logic level MOSFET
***ark
MOSFET, N CH, 30V, 15A, 8-QFN3333
***el Electronic
IC PREDRIVER QUAD LOSIDE 32-LQFP
***ure Electronics
N-Channel 30 V 0.02 Ohm Power MOSFET SMT - TO-252-3
***et
Trans MOSFET N-CH 30V 18.4A 3-Pin(2+Tab) DPAK T/R
***el Electronic
ANALOG DEVICES ADM707ANZ. IC, MPU SUPERVISOR, 4.65VTH, 8DIP
***des Inc SCT
N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS
***ronik
N-CH 30V 18A 20mOhm TO252-3 RoHSconf
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
PowerPAIR® Dual-MOSFETs
Vishay PowerPAIR® Dual-MOSFETs combine optimized combinations of MOSFETs in one compact package. The co-packaged PowerPAIR Dual-MOSFETs use less space and offer increased performance over separate discretes. By having the two MOSFETs already connected inside the PowerPAIR package, layouts are made easier and parasitic inductance from PCB traces are reduced, increasing efficiency. 
Parte # Mfg. Descripción Valores Precio
SIZ904DT-T1-GE3
DISTI # SIZ904DT-T1-GE3CT-ND		Vishay SiliconixMOSFET 2N-CH 30V 12A POWERPAIR
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
    SIZ904DT-T1-GE3
    DISTI # SIZ904DT-T1-GE3DKR-ND    		Vishay SiliconixMOSFET 2N-CH 30V 12A POWERPAIR
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      SIZ904DT-T1-GE3
      DISTI # SIZ904DT-T1-GE3TR-ND      		Vishay SiliconixMOSFET 2N-CH 30V 12A POWERPAIR
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape & Reel (TR)      		Temporarily Out of Stock
      • 3000:$0.5205
      SIZ904DT-T1-GE3
      DISTI # SIZ904DT-T1-GE3      		Vishay IntertechnologiesTrans MOSFET N-CH 30V 9.5A/14.5A 8-Pin PowerPAIR T/R - Tape and Reel (Alt: SIZ904DT-T1-GE3)
      RoHS: Not Compliant
      Min Qty: 3000
      Container: Reel      		Americas - 0
        SIZ904DT-T1-GE3
        DISTI # 70616574        		Vishay SiliconixSIZ904DT-T1-GE3 Dual N-channel MOSFET Transistor,9.5A,14.5A,30V,8-Pin PowerPAIR
        RoHS: Compliant        		0
        • 300:$0.6600
        • 600:$0.6500
        • 1500:$0.6400
        • 3000:$0.6200
        SIZ904DT-T1-GE3
        DISTI # 78-SIZ904DT-T1-GE3        		Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5
        RoHS: Compliant        		0
        • 1:$1.1900
        • 10:$0.9740
        • 100:$0.7470
        • 500:$0.6430
        • 1000:$0.6080
        • 3000:$0.5640
        SIZ904DTT1GE3Vishay Intertechnologies 
        RoHS: Compliant        		Europe - 3000
          SIZ904DT-T1-GE3Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5Americas -
            Imagen Parte # Descripción
            SIZ904DT-T1-GE3

            Mfr.#: SIZ904DT-T1-GE3

            OMO.#: OMO-SIZ904DT-T1-GE3

            		 MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5
            SIZ904DT

            Mfr.#: SIZ904DT

            OMO.#: OMO-SIZ904DT-1190

            		 Nuevo y original
            SIZ904DT-T1-GE3

            Mfr.#: SIZ904DT-T1-GE3

            OMO.#: OMO-SIZ904DT-T1-GE3-VISHAY

            		 MOSFET 2N-CH 30V 12A POWERPAIR
            SIZ904DTT1GE3

            Mfr.#: SIZ904DTT1GE3

            OMO.#: OMO-SIZ904DTT1GE3-1190

            		 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
            Disponibilidad
            Valores:
            Available
            En orden:
            1986
            Ingrese la cantidad:
            El precio actual de SIZ904DT-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
            Precio de referencia (USD)
            Cantidad
            Precio unitario
            Ext. Precio
            1
            1,18 US$
            1,18 US$
            10
            0,97 US$
            9,73 US$
            100
            0,75 US$
            74,60 US$
            500
            0,64 US$
            321,00 US$
            1000
            0,51 US$
            506,00 US$
            Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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