SIZ90

SIZ900DP vs SIZ900DP-T1-GE3 vs SIZ900DT

 
PartNumberSIZ900DPSIZ900DP-T1-GE3SIZ900DT
Description
Manufacturer--Vishay Siliconix
Product Category--FETs - Arrays
Series--TrenchFETR
Packaging--Digi-ReelR Alternate Packaging
Part Aliases--SIZ900DT-GE3
Mounting Style--SMD/SMT
Package Case--6-PowerPair
Technology--Si
Operating Temperature---55°C ~ 150°C (TJ)
Mounting Type--Surface Mount
Number of Channels--2 Channel
Supplier Device Package--6-PowerPair
Configuration--Dual Common Source
FET Type--2 N-Channel (Half Bridge)
Power Max--48W, 100W
Transistor Type--2 N-Channel
Drain to Source Voltage Vdss--30V
Input Capacitance Ciss Vds--1830pF @ 15V
FET Feature--Logic Level Gate
Current Continuous Drain Id 25°C--24A, 28A
Rds On Max Id Vgs--7.2 mOhm @ 19.4A, 10V
Vgs th Max Id--2.4V @ 250μA
Gate Charge Qg Vgs--45nC @ 10V
Pd Power Dissipation--48 W 100 W
Maximum Operating Temperature--+ 150 C
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--24 A
Vds Drain Source Breakdown Voltage--30 V
Rds On Drain Source Resistance--5.9 mOhms 3.2 mOhms
Transistor Polarity--N-Channel
Fabricante Parte # Descripción RFQ
Vishay / Siliconix
Vishay / Siliconix
SIZ904DT-T1-GE3 MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5
SIZ902DT-T1-GE3 MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5
SIZ900DP Nuevo y original
SIZ900DP-T1-GE3 Nuevo y original
SIZ900DT Nuevo y original
SIZ900DT-T1-E3 Nuevo y original
SIZ904DT Nuevo y original
SIZ904DTT1GE3 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Vishay
Vishay
SIZ900DT-T1-GE3 MOSFET 2N-CH 30V 24A POWERPAIR
SIZ902DT-T1-GE3 MOSFET 2N-CH 30V 16A POWERPAIR
SIZ904DT-T1-GE3 MOSFET 2N-CH 30V 12A POWERPAIR
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