PartNumber | SIZ900DP | SIZ900DP-T1-GE3 | SIZ900DT |
Description | |||
Manufacturer | - | - | Vishay Siliconix |
Product Category | - | - | FETs - Arrays |
Series | - | - | TrenchFETR |
Packaging | - | - | Digi-ReelR Alternate Packaging |
Part Aliases | - | - | SIZ900DT-GE3 |
Mounting Style | - | - | SMD/SMT |
Package Case | - | - | 6-PowerPair |
Technology | - | - | Si |
Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
Mounting Type | - | - | Surface Mount |
Number of Channels | - | - | 2 Channel |
Supplier Device Package | - | - | 6-PowerPair |
Configuration | - | - | Dual Common Source |
FET Type | - | - | 2 N-Channel (Half Bridge) |
Power Max | - | - | 48W, 100W |
Transistor Type | - | - | 2 N-Channel |
Drain to Source Voltage Vdss | - | - | 30V |
Input Capacitance Ciss Vds | - | - | 1830pF @ 15V |
FET Feature | - | - | Logic Level Gate |
Current Continuous Drain Id 25°C | - | - | 24A, 28A |
Rds On Max Id Vgs | - | - | 7.2 mOhm @ 19.4A, 10V |
Vgs th Max Id | - | - | 2.4V @ 250μA |
Gate Charge Qg Vgs | - | - | 45nC @ 10V |
Pd Power Dissipation | - | - | 48 W 100 W |
Maximum Operating Temperature | - | - | + 150 C |
Vgs Gate Source Voltage | - | - | 20 V |
Id Continuous Drain Current | - | - | 24 A |
Vds Drain Source Breakdown Voltage | - | - | 30 V |
Rds On Drain Source Resistance | - | - | 5.9 mOhms 3.2 mOhms |
Transistor Polarity | - | - | N-Channel |