 |  | | |
| PartNumber | SIZ904DT-T1-GE3 | SIZ904DT | SIZ904DTT1GE3 |
| Description | MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | PowerPAIR-6x5-8 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 12 A, 16 A | - | - |
| Rds On Drain Source Resistance | 24 mOhms, 13.5 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1 V, 1.2 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 12 nC, 23 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 20 W, 33 W | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | - | - |
| Series | SIZ | - | - |
| Transistor Type | 2 N-Channel | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 17 S, 24 S | - | - |
| Fall Time | 10 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 12 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 13 ns | - | - |
| Typical Turn On Delay Time | 15 ns | - | - |
| Part # Aliases | SIZ904DT-GE3 | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIZ904DT-T1-GE3 | MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5 | |
| SIZ904DT | Nuevo y original | ||
| SIZ904DTT1GE3 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | ||
Vishay |
SIZ904DT-T1-GE3 | MOSFET 2N-CH 30V 12A POWERPAIR |