SIZ904DT-T1-GE3

SIZ904DT-T1-GE3
Mfr. #:
SIZ904DT-T1-GE3
Fabricante:
Vishay
Descripción:
MOSFET 2N-CH 30V 12A POWERPAIR
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIZ904DT-T1-GE3 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Más información:
SIZ904DT-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante
Vishay Siliconix
categoria de producto
FET: matrices
Serie
TrincheraFETR
embalaje
Embalaje alternativo de Digi-ReelR
Alias ​​de parte
SIZ904DT-GE3
Estilo de montaje
SMD / SMT
Paquete-Estuche
6-PowerPair
Tecnología
Si
Temperatura de funcionamiento
-55°C ~ 150°C (TJ)
Tipo de montaje
Montaje superficial
Número de canales
2 Channel
Paquete de dispositivo de proveedor
6-PowerPair
Configuración
Doble
Tipo FET
2 N-Channel (Half Bridge)
Potencia máxima
20W, 33W
Tipo transistor
2 N-Channel
Drenaje-a-fuente-voltaje-Vdss
30V
Entrada-Capacitancia-Ciss-Vds
435pF @ 15V
Función FET
Puerta de nivel lógico
Corriente-Continuo-Drenaje-Id-25 ° C
12A, 16A
Rds-On-Max-Id-Vgs
24 mOhm @ 7.8A, 10V
Vgs-th-Max-Id
2.5V @ 250μA
Puerta-Carga-Qg-Vgs
12nC @ 10V
Disipación de potencia Pd
33 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
10 ns 8 ns
Hora de levantarse
10 ns 9 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
16 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Resistencia a la fuente de desagüe de Rds
24 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
15 nS 14 nS
Qg-Gate-Charge
3.8 nC 7.3 nC
Tags
SIZ904, SIZ90, SIZ9, SiZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
PowerPAIR® Dual-MOSFETs
Vishay PowerPAIR® Dual-MOSFETs combine optimized combinations of MOSFETs in one compact package. The co-packaged PowerPAIR Dual-MOSFETs use less space and offer increased performance over separate discretes. By having the two MOSFETs already connected inside the PowerPAIR package, layouts are made easier and parasitic inductance from PCB traces are reduced, increasing efficiency. 
Parte # Mfg. Descripción Valores Precio
SIZ904DT-T1-GE3
DISTI # SIZ904DT-T1-GE3CT-ND
Vishay SiliconixMOSFET 2N-CH 30V 12A POWERPAIR
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Limited Supply - Call
    SIZ904DT-T1-GE3
    DISTI # SIZ904DT-T1-GE3DKR-ND
    Vishay SiliconixMOSFET 2N-CH 30V 12A POWERPAIR
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    Limited Supply - Call
      SIZ904DT-T1-GE3
      DISTI # SIZ904DT-T1-GE3TR-ND
      Vishay SiliconixMOSFET 2N-CH 30V 12A POWERPAIR
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape & Reel (TR)
      Temporarily Out of Stock
      • 3000:$0.5205
      SIZ904DT-T1-GE3
      DISTI # SIZ904DT-T1-GE3
      Vishay IntertechnologiesTrans MOSFET N-CH 30V 9.5A/14.5A 8-Pin PowerPAIR T/R - Tape and Reel (Alt: SIZ904DT-T1-GE3)
      RoHS: Not Compliant
      Min Qty: 3000
      Container: Reel
      Americas - 0
        SIZ904DT-T1-GE3
        DISTI # 70616574
        Vishay SiliconixSIZ904DT-T1-GE3 Dual N-channel MOSFET Transistor,9.5A,14.5A,30V,8-Pin PowerPAIR
        RoHS: Compliant
        0
        • 300:$0.6600
        • 600:$0.6500
        • 1500:$0.6400
        • 3000:$0.6200
        SIZ904DT-T1-GE3
        DISTI # 78-SIZ904DT-T1-GE3
        Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5
        RoHS: Compliant
        0
        • 1:$1.1900
        • 10:$0.9740
        • 100:$0.7470
        • 500:$0.6430
        • 1000:$0.6080
        • 3000:$0.5640
        SIZ904DTT1GE3Vishay Intertechnologies 
        RoHS: Compliant
        Europe - 3000
          SIZ904DT-T1-GE3Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5Americas -
            Imagen Parte # Descripción
            SIZ904DT-T1-GE3

            Mfr.#: SIZ904DT-T1-GE3

            OMO.#: OMO-SIZ904DT-T1-GE3

            MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5
            SIZ904DT

            Mfr.#: SIZ904DT

            OMO.#: OMO-SIZ904DT-1190

            Nuevo y original
            SIZ904DT-T1-GE3

            Mfr.#: SIZ904DT-T1-GE3

            OMO.#: OMO-SIZ904DT-T1-GE3-VISHAY

            MOSFET 2N-CH 30V 12A POWERPAIR
            SIZ904DTT1GE3

            Mfr.#: SIZ904DTT1GE3

            OMO.#: OMO-SIZ904DTT1GE3-1190

            Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
            Disponibilidad
            Valores:
            Available
            En orden:
            4000
            Ingrese la cantidad:
            El precio actual de SIZ904DT-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
            Precio de referencia (USD)
            Cantidad
            Precio unitario
            Ext. Precio
            1
            0,65 US$
            0,65 US$
            10
            0,62 US$
            6,16 US$
            100
            0,58 US$
            58,32 US$
            500
            0,55 US$
            275,40 US$
            1000
            0,52 US$
            518,40 US$
            Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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