TGF2978-SM

TGF2978-SM
Mfr. #:
TGF2978-SM
Fabricante:
Qorvo
Descripción:
RF JFET Transistors 8-12GHz 20W GaN PAE 50% Gain 11dB
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
TGF2978-SM Ficha de datos
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Más información:
TGF2978-SM más información
Atributo del producto
Valor de atributo
Fabricante
TriQuint (Qorvo)
categoria de producto
Transistores - FET, MOSFET - Sencillo
embalaje
Bandeja
Alias ​​de parte
1127373
Unidad de peso
0.004339 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
QFN-20
Tecnología
GaN SiC
Configuración
Único
Tipo transistor
HEMT
Ganar
11 dB
Potencia de salida
19 W
Disipación de potencia Pd
33 W
Temperatura máxima de funcionamiento
+ 225 C
Frecuencia de operación
DC to 12 GHz
Id-corriente-de-drenaje-continua
1.3 A
Vds-Drain-Source-Breakdown-Voltage
32 V
Polaridad del transistor
Canal N
Kit de desarrollo
TGF2978-SMEVB1
Vgs-Gate-Source-Breakdown-Voltage
- 2.7 V
Tags
TGF297, TGF29, TGF2, TGF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor, DC - 12 GHz, 20 W, 11 dB, 32 V, GaN, Plastic QFN
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
TGF297x GaN RF Transistor
Qorvo TGF297x GaN RF Transistors have a frequency range of DC to 12GHz. The TGF2970 transistors offer output power from 6W up to 22W. The TGF2970 transistors are constructed using a TQGaN25 process, which features field plate techniques to optimize power and efficiency at high drain bias operation. Learn More
Parte # Mfg. Descripción Valores Precio
TGF2978-SM
DISTI # 772-TGF2978-SM
QorvoRF JFET Transistors 8-12GHz 20W GaN PAE 50% Gain 11dB
RoHS: Compliant
143
  • 1:$49.6000
  • 25:$42.9000
  • 100:$37.1000
TGF2978-SM-EVB
DISTI # 772-TGF2978-SM-EVB
QorvoRF Development Tools
RoHS: Compliant
0
  • 1:$875.0000
Imagen Parte # Descripción
TGF2929-HM

Mfr.#: TGF2929-HM

OMO.#: OMO-TGF2929-HM

RF JFET Transistors DC-3.5GHz 100W 28V Gain 17.4dB GaN
TGF2957

Mfr.#: TGF2957

OMO.#: OMO-TGF2957

RF JFET Transistors DC-12GHz 70W 32V GaN P3dB @ 3GHz 48.6dBm
TGF2954

Mfr.#: TGF2954

OMO.#: OMO-TGF2954

RF JFET Transistors DC-12GHz 27W 32V GaN P3dB @ 3GHz 44.5dBm
TGF2941

Mfr.#: TGF2941

OMO.#: OMO-TGF2941

RF JFET Transistors DC-25GHz 4Watt NF 1.3dB GaN
TGF2936

Mfr.#: TGF2936

OMO.#: OMO-TGF2936

RF JFET Transistors DC-25GHz 10Watt NF 1.3dB GaN
TGF2929-FL

Mfr.#: TGF2929-FL

OMO.#: OMO-TGF2929-FL

RF MOSFET Transistors DC-3.5GHz 100W 28V GaN
TGF2979-SM

Mfr.#: TGF2979-SM

OMO.#: OMO-TGF2979-SM-318

RF JFET Transistors 8-12GHz 25W GaN PAE 50% Gain 11dB
TGF2929-FS/FL, 3.1-3.5GHZ EVB

Mfr.#: TGF2929-FS/FL, 3.1-3.5GHZ EVB

OMO.#: OMO-TGF2929-FS-FL-3-1-3-5GHZ-EVB-319

RF MOSFET Transistors DC-3.5GHz 100W Eval Board
TGF2929-FS

Mfr.#: TGF2929-FS

OMO.#: OMO-TGF2929-FS-319

RF MOSFET Transistors DC-3.5GHz 100W 28V GaN
TGF2979-SM-EVB

Mfr.#: TGF2979-SM-EVB

OMO.#: OMO-TGF2979-SM-EVB-1152

RF Development Tools
Disponibilidad
Valores:
Available
En orden:
5500
Ingrese la cantidad:
El precio actual de TGF2978-SM es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
55,65 US$
55,65 US$
10
52,87 US$
528,68 US$
100
50,08 US$
5 008,50 US$
500
47,30 US$
23 651,25 US$
1000
44,52 US$
44 520,00 US$
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