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TGF2929-HM

TGF2929-HM
Mfr. #:
TGF2929-HM
Fabricante:
Qorvo
Descripción:
RF JFET Transistors DC-3.5GHz 100W 28V Gain 17.4dB GaN
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
TGF2929-HM Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
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ECAD Model:
Más información:
TGF2929-HM más información
Atributo del producto
Valor de atributo
Fabricante:
Qorvo
Categoria de producto:
Transistores RF JFET
RoHS:
Y
Tipo de transistor:
HEMT
Tecnología:
GaN SiC
Ganar:
17.4 dB
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
50 V
Vgs - Voltaje de ruptura de puerta-fuente:
- 2.8 V
Id - Corriente de drenaje continua:
7.2 A
Potencia de salida:
132 W
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 85 C
Pd - Disipación de energía:
140 W
Estilo de montaje:
SMD / SMT
Embalaje:
Gofre
Configuración:
Único
Frecuencia de operación:
DC to 3.5 GHz
Rango de temperatura de funcionamiento:
- 40 C to + 85 C
Serie:
TGF
Marca:
Qorvo
Kit de desarrollo:
TGF2929-HM EVB1
Sensible a la humedad:
Yes
Tipo de producto:
Transistores RF JFET
Cantidad de paquete de fábrica:
25
Subcategoría:
Transistores
Parte # Alias:
1135635
Tags
TGF292, TGF29, TGF2, TGF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor, DC to 3.5 GHz, 100 W, 17.4 dB, 28 V, GaN, NI-360 Hermetic
***hardson RFPD
RF POWER TRANSISTOR
TGF2929 GaN RF Power Transistors
Qorvo TGF2929 GaN RF Power Transistors are discrete GaN on SiC HEMTs that operate from DC to 3.5GHz. They are constructed with the QGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.Learn More
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
Parte # Mfg. Descripción Valores Precio
TGF2929-HM
DISTI # 772-TGF2929-HM		QorvoRF JFET Transistors DC-3.5GHz 100W 28V Gain 17.4dB GaN
RoHS: Compliant		0
  • 25:$338.4400
TGF2929-HM-EVB
DISTI # 772-TGF2929-HM-EVB		QorvoRF Development Tools
RoHS: Compliant		0
  • 1:$875.0000
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Disponibilidad
Valores:
25
En orden:
2008
Ingrese la cantidad:
El precio actual de TGF2929-HM es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
25
338,44 US$
8 461,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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