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TGF2929-FL

TGF2929-FL
Mfr. #:
TGF2929-FL
Fabricante:
Qorvo
Descripción:
RF MOSFET Transistors DC-3.5GHz 100W 28V GaN
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
TGF2929-FL Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
TGF2929-FL más información
Atributo del producto
Valor de atributo
Fabricante:
Qorvo
Categoria de producto:
Transistores RF MOSFET
RoHS:
Y
Polaridad del transistor:
Canal N
Tecnología:
GaN SiC
Id - Corriente de drenaje continua:
12 A
Vds - Voltaje de ruptura de drenaje-fuente:
28 V
Ganar:
14 dB
Potencia de salida:
107 W
Embalaje:
Bandeja
Frecuencia de operación:
3.5 GHz
Escribe:
RF Power MOSFET
Marca:
Qorvo
Sensible a la humedad:
Yes
Pd - Disipación de energía:
144 W
Tipo de producto:
Transistores RF MOSFET
Cantidad de paquete de fábrica:
25
Subcategoría:
MOSFET
Vgs - Voltaje puerta-fuente:
145 V
Vgs th - Voltaje umbral puerta-fuente:
- 2.9 V
Parte # Alias:
1123811
Tags
TGF2929-F, TGF292, TGF29, TGF2, TGF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor, DC to 3.5 GHz, 100 W, 14 dB, 28 V, GaN
TGF2929 GaN RF Power Transistors
Qorvo TGF2929 GaN RF Power Transistors are discrete GaN on SiC HEMTs that operate from DC to 3.5GHz. They are constructed with the QGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.Learn More
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
Parte # Mfg. Descripción Valores Precio
TGF2929-FL
DISTI # 772-TGF2929-FL		QorvoRF MOSFET Transistors DC-3.5GHz 100W 28V GaN
RoHS: Compliant		11
  • 1:$375.0000
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Disponibilidad
Valores:
28
En orden:
2011
Ingrese la cantidad:
El precio actual de TGF2929-FL es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
375,00 US$
375,00 US$
25
338,44 US$
8 461,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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