RFD8P06ESM

RFD8P06ESM
Mfr. #:
RFD8P06ESM
Fabricante:
Rochester Electronics, LLC
Descripción:
Power Field-Effect Transistor, 8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
RFD8P06ESM Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
INTERSIL
categoria de producto
Chips de IC
Tags
RFD8P06E, RFD8P06, RFD8P0, RFD8P, RFD8, RFD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Parte # Mfg. Descripción Valores Precio
RFD8P06ESM9A
DISTI # RFD8P06ESM9A
Renesas Electronics Corporation(Alt: RFD8P06ESM9A)
RoHS: Compliant
Min Qty: 1
Europe - 0
    RFD8P06ESMHarris SemiconductorPower Field-Effect Transistor, 8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
    RoHS: Not Compliant
    414
    • 1000:$0.3200
    • 500:$0.3400
    • 100:$0.3600
    • 25:$0.3700
    • 1:$0.4000
    RFD8P06ESMIntersil CorporationMOSFET Transistor, P-Channel, TO-252AA1125
    • 530:$0.3375
    • 94:$0.3780
    • 1:$1.0800
    RFD8P06ESMHarris SemiconductorMOSFET Transistor, P-Channel, TO-252AA167
    • 94:$0.3780
    • 20:$0.5400
    • 1:$1.0800
    RFD8P06ESM9AHarris SemiconductorMOSFET Transistor, P-Channel, TO-252AA (Also Known As: RFD8P06ESM)413
    • 297:$0.9375
    • 134:$1.0125
    • 1:$2.2500
    RFD8P06ESM9AHarris SemiconductorMOSFET Transistor, P-Channel, TO-252AA413
    • 297:$0.9375
    • 134:$1.0125
    • 1:$2.2500
    Imagen Parte # Descripción
    RFD8P05

    Mfr.#: RFD8P05

    OMO.#: OMO-RFD8P05

    MOSFET TO-251AA P-Ch Power
    RFD8P03

    Mfr.#: RFD8P03

    OMO.#: OMO-RFD8P03-1190

    Nuevo y original
    RFD8P03LSM

    Mfr.#: RFD8P03LSM

    OMO.#: OMO-RFD8P03LSM-1190

    Nuevo y original
    RFD8P05SM

    Mfr.#: RFD8P05SM

    OMO.#: OMO-RFD8P05SM-ON-SEMICONDUCTOR

    MOSFET P-CH 50V 8A TO-252AA
    RFD8P05SM96

    Mfr.#: RFD8P05SM96

    OMO.#: OMO-RFD8P05SM96-1190

    Nuevo y original
    RFD8P05SM9AS2385

    Mfr.#: RFD8P05SM9AS2385

    OMO.#: OMO-RFD8P05SM9AS2385-1190

    Nuevo y original
    RFD8P06

    Mfr.#: RFD8P06

    OMO.#: OMO-RFD8P06-1190

    Nuevo y original
    RFD8P06E

    Mfr.#: RFD8P06E

    OMO.#: OMO-RFD8P06E-1190

    Power Field-Effect Transistor, 8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
    RFD8P06LESM

    Mfr.#: RFD8P06LESM

    OMO.#: OMO-RFD8P06LESM-1190

    8 A, 60 V, 0.33 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
    RFD8P6LE

    Mfr.#: RFD8P6LE

    OMO.#: OMO-RFD8P6LE-1190

    Nuevo y original
    Disponibilidad
    Valores:
    Available
    En orden:
    2500
    Ingrese la cantidad:
    El precio actual de RFD8P06ESM es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,48 US$
    0,48 US$
    10
    0,46 US$
    4,56 US$
    100
    0,43 US$
    43,20 US$
    500
    0,41 US$
    204,00 US$
    1000
    0,38 US$
    384,00 US$
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