RFD8P05SM96

RFD8P05SM96
Mfr. #:
RFD8P05SM96
Fabricante:
HARTING Technology Group
Descripción:
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
RFD8P05SM96 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Tags
RFD8P05SM9, RFD8P05S, RFD8P05, RFD8P0, RFD8P, RFD8, RFD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Parte # Mfg. Descripción Valores Precio
RFD8P05SM96HARTING Technology Group 
RoHS: Not Compliant
750
    Imagen Parte # Descripción
    RFD8P05

    Mfr.#: RFD8P05

    OMO.#: OMO-RFD8P05

    MOSFET TO-251AA P-Ch Power
    RFD8P03L

    Mfr.#: RFD8P03L

    OMO.#: OMO-RFD8P03L-1190

    Nuevo y original
    RFD8P05

    Mfr.#: RFD8P05

    OMO.#: OMO-RFD8P05-ON-SEMICONDUCTOR

    MOSFET P-CH 50V 8A I-PAK
    RFD8P05SM (TO-251)

    Mfr.#: RFD8P05SM (TO-251)

    OMO.#: OMO-RFD8P05SM-TO-251--1190

    Nuevo y original
    RFD8P05SM9A

    Mfr.#: RFD8P05SM9A

    OMO.#: OMO-RFD8P05SM9A-1190

    Power Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
    RFD8P06

    Mfr.#: RFD8P06

    OMO.#: OMO-RFD8P06-1190

    Nuevo y original
    RFD8P06ESM9A

    Mfr.#: RFD8P06ESM9A

    OMO.#: OMO-RFD8P06ESM9A-1190

    (Alt: RFD8P06ESM9A)
    RFD8P06LE

    Mfr.#: RFD8P06LE

    OMO.#: OMO-RFD8P06LE-1190

    Power Field-Effect Transistor, 8A I(D), 60V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
    RFD8P06LESM

    Mfr.#: RFD8P06LESM

    OMO.#: OMO-RFD8P06LESM-1190

    8 A, 60 V, 0.33 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
    RFD8P06LESM9A

    Mfr.#: RFD8P06LESM9A

    OMO.#: OMO-RFD8P06LESM9A-1190

    - Bulk (Alt: RFD8P06LESM9A)
    Disponibilidad
    Valores:
    Available
    En orden:
    5000
    Ingrese la cantidad:
    El precio actual de RFD8P05SM96 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,00 US$
    0,00 US$
    10
    0,00 US$
    0,00 US$
    100
    0,00 US$
    0,00 US$
    500
    0,00 US$
    0,00 US$
    1000
    0,00 US$
    0,00 US$
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