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RFD8P06

RFD8P06 vs RFD8P06E vs RFD8P06ESM

 
PartNumberRFD8P06RFD8P06ERFD8P06ESM
DescriptionPower Field-Effect Transistor, 8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AAPower Field-Effect Transistor, 8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Manufacturer--INTERSIL
Product Category--IC Chips
Fabricante Parte # Descripción RFQ
RFD8P06 Nuevo y original
RFD8P06E Power Field-Effect Transistor, 8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
RFD8P06ESM Power Field-Effect Transistor, 8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
RFD8P06ESM9A (Alt: RFD8P06ESM9A)
RFD8P06LE Power Field-Effect Transistor, 8A I(D), 60V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
RFD8P06LESM 8 A, 60 V, 0.33 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
RFD8P06LESM9A - Bulk (Alt: RFD8P06LESM9A)
RFD8P06LESM9AR4407 Nuevo y original
RFD8P06SM Nuevo y original
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