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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| RFD8P03LSM | Harris Semiconductor | RoHS: Not Compliant | 300 |
|
| RFD8P03LSM96 | Harris Semiconductor | RoHS: Not Compliant | 1800 |
|
| Imagen | Parte # | Descripción |
|---|---|---|
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Mfr.#: RFD8P05 OMO.#: OMO-RFD8P05 |
MOSFET TO-251AA P-Ch Power |
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Mfr.#: RFD21783 OMO.#: OMO-RFD21783 |
RF Modules 3 button switch key Keyfob |
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Mfr.#: RFD12N06RLESM9A-CUT TAPE |
Nuevo y original |
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Mfr.#: RFD15N06LE OMO.#: OMO-RFD15N06LE-1190 |
Electronic Component |
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Mfr.#: RFD16N02L OMO.#: OMO-RFD16N02L-1190 |
Power Field-Effect Transistor, 16A I(D), 20V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA |
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Mfr.#: RFD3055LESM9A |
MOSFET N-CH 60V 11A TO-252AA |
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Mfr.#: RFD8P06ESM OMO.#: OMO-RFD8P06ESM-1190 |
Power Field-Effect Transistor, 8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA |
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Mfr.#: RFD8P06LE OMO.#: OMO-RFD8P06LE-1190 |
Power Field-Effect Transistor, 8A I(D), 60V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA |
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Mfr.#: RFDIP160806BLM5T62 OMO.#: OMO-RFDIP160806BLM5T62-1190 |
Diplexe |
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Mfr.#: RFD-1682-4 OMO.#: OMO-RFD-1682-4-1190 |
BETWEEN SERIES ADAPTER |