PartNumber | TH58BVG2S3HTA00 | TH58BVG2S3HBAI6 | TH58BVG2S3HBAI4 |
Description | NAND Flash 4Gb 24nm SLC NAND (EEPROM) | NAND Flash 4Gb 24nm SLC NAND (EEPROM) | NAND Flash 4Gb 24nm SLC NAND (EEPROM) |
Manufacturer | Toshiba | Toshiba | Toshiba |
Product Category | NAND Flash | NAND Flash | NAND Flash |
RoHS | Y | Y | Y |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TSOP-48 | VFBGA-67 | TFBGA-63 |
Memory Size | 4 Gbit | 4 Gbit | 4 Gbit |
Interface Type | Parallel | Parallel | Parallel |
Organization | 512 M x 8 | 512 M x 8 | 512 M x 8 |
Data Bus Width | 8 bit | 8 bit | 8 bit |
Supply Voltage Min | 2.7 V | 2.7 V | 2.7 V |
Supply Voltage Max | 3.6 V | 3.6 V | 3.6 V |
Minimum Operating Temperature | 0 C | - 40 C | - 40 C |
Maximum Operating Temperature | + 70 C | + 85 C | + 85 C |
Packaging | Tray | Tray | Tray |
Memory Type | NAND | NAND | NAND |
Product | NAND Flash | - | NAND Flash |
Brand | Toshiba Memory | Toshiba Memory | Toshiba Memory |
Moisture Sensitive | Yes | Yes | Yes |
Product Type | NAND Flash | NAND Flash | NAND Flash |
Factory Pack Quantity | 96 | 338 | 210 |
Subcategory | Memory & Data Storage | Memory & Data Storage | Memory & Data Storage |
Timing Type | - | - | Synchronous |
Supply Current Max | - | - | 30 mA |
Speed | - | - | 25 ns |
Architecture | - | - | Block Erase |
Maximum Clock Frequency | - | - | - |
Fabricante | Parte # | Descripción | RFQ |
---|---|---|---|
Toshiba Memory |
TH58BVG2S3HTA00 | NAND Flash 4Gb 24nm SLC NAND (EEPROM) | |
TH58BYG3S0HBAI6 | NAND Flash 1.8V 8Gb 24nm SLC NAND (EEPROM) | ||
TH58BVG2S3HTAI0 | NAND Flash 4Gb 24nm I-Temp SLC NAND (EEPROM) | ||
TH58BVG3S0HTA00 | NAND Flash 8Gb 24nm SLC NAND (EEPROM) | ||
TH58BYG2S3HBAI4 | NAND Flash 1.8V 4Gb 24nm SLC NAND (EEPROM) | ||
TH58BVG3S0HTAI0 | NAND Flash 8Gb 24nm SLC NAND (EEPROM) | ||
TH58BYG3S0HBAI4 | NAND Flash 1.8V 8Gb 24nm SLC NAND (EEPROM) | ||
TH58BVG2S3HBAI6 | NAND Flash 4Gb 24nm SLC NAND (EEPROM) | ||
TH58BVG2S3HBAI4 | NAND Flash 4Gb 24nm SLC NAND (EEPROM) | ||
TH58BYG2S3HBAI6 | NAND Flash 1.8V 4Gb 24nm SLC NAND (EEPROM) | ||
TH58BVG3S0HTA00 | EEPROM 8 Gbit CMOS NAND EEPROM | ||
TH58BVG2S3HTAI0 | EEPROM 4 Gbit CMOS NAND EEPROM | ||
TH58BVG2S3HTA00 | EEPROM 4 Gbit CMOS NAND EEPROM | ||
TH58BYG2S3HBAI6 | IC FLASH 4G PARALLEL 67VFBGA Benand | ||
TH58BVG2S3HBAI4 | 4GB SLC BENAND 24NM BGA 9X11 (EE Benand | ||
TH58BVG3S0HTAI0 | Flash Memory 8 GBIT CMOS NAND EEPROM | ||
TH58BYG3S0HBAI6 | 8GB SLC NAND 24NM BGA 6.5X8 1.8V Benand | ||
TH58BYG2S3HBAI4 | 4G SLC NAND BGA 24NM Benand | ||
TH58BVG3S0HTAI0B4H | TOSTH58BVG3S0HTAI0B4H 8 GBIT (1G × 8 BIT (Alt: TH58BVG3S0HTAI0B4H) | ||
TH58BVG2S3HTA00(B4H) | Nuevo y original | ||
TH58BVG2S3HTA00_REEL | NAND Flash Memory (Alt: TH58BVG2S3HTA00_REEL) | ||
TH58BVG2S3HTA00_TRAY | NAND Flash Memory (Alt: TH58BVG2S3HTA00_TRAY) | ||
TH58BVG2S3HTAIO | Nuevo y original | ||
TH58BVG3S0FTA00 | Nuevo y original | ||
TH58BVG3S0HBAI4 | Nuevo y original | ||
TH58BVG3S0HBAI6 | Nuevo y original | ||
TH58BYG3S0HBAI4 | 8GB SLC BENAND 24NM BGA 9X11 1.8 | ||
TH58BVG2S3HBAI4-ND | Nuevo y original | ||
TH58BVG2S3HTA00-ND | Nuevo y original | ||
TH58BVG2S3HTAI0-ND | Nuevo y original | ||
TH58BVG3S0HTA00-ND | Nuevo y original | ||
TH58BVG3S0HTAI0-ND | Nuevo y original | ||
TH58BYG2S3HBAI4-ND | Nuevo y original | ||
TH58BYG2S3HBAI6-ND | Nuevo y original | ||
TH58BYG3S0HBAI6-ND | Nuevo y original |