PartNumber | SPD02N60C3 | SPD02N60C3(02N60C3) | SPD02N60C3,02N60C3 |
Description | Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | ||
Manufacturer | INFINEON | - | - |
Product Category | FETs - Single | - | - |
Series | CoolMOS C3 | - | - |
Packaging | Reel | - | - |
Part Aliases | SP000308771 SPD02N60C3BTMA1 SPD02N60C3XT | - | - |
Unit Weight | 0.139332 oz | - | - |
Mounting Style | SMD/SMT | - | - |
Tradename | CoolMOS | - | - |
Package Case | TO-252-3 | - | - |
Technology | Si | - | - |
Number of Channels | 1 Channel | - | - |
Configuration | Single | - | - |
Transistor Type | 1 N-Channel | - | - |
Pd Power Dissipation | 25 W | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Fall Time | 12 ns | - | - |
Rise Time | 3 ns | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Id Continuous Drain Current | 1.8 A | - | - |
Vds Drain Source Breakdown Voltage | 600 V | - | - |
Rds On Drain Source Resistance | 3 Ohms | - | - |
Transistor Polarity | N-Channel | - | - |
Typical Turn Off Delay Time | 68 ns | - | - |
Typical Turn On Delay Time | 6 ns | - | - |
Channel Mode | Enhancement | - | - |