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SIZ900DT-T1-GE3

SIZ900DT-T1-GE3
Mfr. #:
SIZ900DT-T1-GE3
Fabricante:
Vishay
Descripción:
MOSFET 2N-CH 30V 24A POWERPAIR
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIZ900DT-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIZ900DT-T1-GE3 DatasheetSIZ900DT-T1-GE3 Datasheet (P4-P6)SIZ900DT-T1-GE3 Datasheet (P7-P9)SIZ900DT-T1-GE3 Datasheet (P10-P12)SIZ900DT-T1-GE3 Datasheet (P13-P14)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Vishay Siliconix
categoria de producto
FET: matrices
Serie
TrincheraFETR
embalaje
Embalaje alternativo de Digi-ReelR
Alias ​​de parte
SIZ900DT-GE3
Estilo de montaje
SMD / SMT
Paquete-Estuche
6-PowerPair
Tecnología
Si
Temperatura de funcionamiento
-55°C ~ 150°C (TJ)
Tipo de montaje
Montaje superficial
Número de canales
2 Channel
Paquete de dispositivo de proveedor
6-PowerPair
Configuración
Fuente común dual
Tipo FET
2 N-Channel (Half Bridge)
Potencia máxima
48W, 100W
Tipo transistor
2 N-Channel
Drenaje-a-fuente-voltaje-Vdss
30V
Entrada-Capacitancia-Ciss-Vds
1830pF @ 15V
Función FET
Puerta de nivel lógico
Corriente-Continuo-Drenaje-Id-25 ° C
24A, 28A
Rds-On-Max-Id-Vgs
7.2 mOhm @ 19.4A, 10V
Vgs-th-Max-Id
2.4V @ 250μA
Puerta-Carga-Qg-Vgs
45nC @ 10V
Disipación de potencia Pd
48 W 100 W
Temperatura máxima de funcionamiento
+ 150 C
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
24 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Resistencia a la fuente de desagüe de Rds
5.9 mOhms 3.2 mOhms
Polaridad del transistor
Canal N
Tags
SIZ900DT, SIZ900, SIZ90, SIZ9, SiZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Parte # Mfg. Descripción Valores Precio
SIZ900DT-T1-GE3
DISTI # V72:2272_09215430		Vishay IntertechnologiesTrans MOSFET N-CH 30V 19A/28A 8-Pin PowerPAIR T/R
RoHS: Compliant		1355
  • 1000:$0.8356
  • 500:$0.9161
  • 250:$0.9235
  • 100:$1.0261
  • 25:$1.2502
  • 10:$1.2545
  • 1:$1.4462
SIZ900DT-T1-GE3
DISTI # SIZ900DT-T1-GE3CT-ND		Vishay SiliconixMOSFET 2N-CH 30V 24A POWERPAIR
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		109In Stock
  • 100:$1.4454
  • 10:$1.7990
  • 1:$1.9900
SIZ900DT-T1-GE3
DISTI # SIZ900DT-T1-GE3TR-ND		Vishay SiliconixMOSFET 2N-CH 30V 24A POWERPAIR
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Limited Supply - Call
  • 3000:$0.8420
SIZ900DT-T1-GE3
DISTI # SIZ900DT-T1-GE3DKR-ND		Vishay SiliconixMOSFET 2N-CH 30V 24A POWERPAIR
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Limited Supply - Call
    SIZ900DT-T1-GE3
    DISTI # 27488534    		Vishay IntertechnologiesTrans MOSFET N-CH 30V 19A/28A 8-Pin PowerPAIR T/R
    RoHS: Compliant    		1355
    • 1000:$0.8356
    • 500:$0.9161
    • 250:$0.9235
    • 100:$1.0261
    • 25:$1.2502
    • 10:$1.2545
    • 9:$1.4462
    SIZ900DT-T1-GE3
    DISTI # 91T5914    		Vishay IntertechnologiesMOSFET, DUAL N CHANNEL, 30V, 24A, POWERPAIR-8,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:24A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0059ohm,Rds(on) Test Voltage Vgs:10V,Power Dissipation Pd:48W, RoHS Compliant: Yes0
    • 1:$1.7700
    • 25:$1.4700
    • 50:$1.3100
    • 100:$1.1400
    • 250:$1.0700
    • 500:$0.9930
    • 1000:$0.9450
    SIZ900DT-T1-GE3
    DISTI # 78-SIZ900DT-T1-GE3    		Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5
    RoHS: Compliant    		3040
    • 1:$1.7700
    • 10:$1.4700
    • 100:$1.1400
    • 500:$0.9930
    • 1000:$0.9450
    SIZ900DT-T1-GE3
    DISTI # C1S803602095429    		Vishay IntertechnologiesMOSFETs1355
    • 250:$0.9235
    • 100:$1.0261
    • 25:$1.2502
    • 10:$1.2545
    SIZ900DT-T1-GE3Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5
    RoHS: Compliant    		Americas -
      Imagen Parte # Descripción
      SIZ900DP

      Mfr.#: SIZ900DP

      OMO.#: OMO-SIZ900DP-1190

      		 Nuevo y original
      SIZ900DP-T1-GE3

      Mfr.#: SIZ900DP-T1-GE3

      OMO.#: OMO-SIZ900DP-T1-GE3-1190

      		 Nuevo y original
      SIZ900DT

      Mfr.#: SIZ900DT

      OMO.#: OMO-SIZ900DT-1190

      		 Nuevo y original
      SIZ900DT-T1-E3

      Mfr.#: SIZ900DT-T1-E3

      OMO.#: OMO-SIZ900DT-T1-E3-1190

      		 Nuevo y original
      SIZ900DT-T1-GE3

      Mfr.#: SIZ900DT-T1-GE3

      OMO.#: OMO-SIZ900DT-T1-GE3-VISHAY

      		 MOSFET 2N-CH 30V 24A POWERPAIR
      Disponibilidad
      Valores:
      Available
      En orden:
      5500
      Ingrese la cantidad:
      El precio actual de SIZ900DT-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      1,02 US$
      1,02 US$
      10
      0,97 US$
      9,69 US$
      100
      0,92 US$
      91,77 US$
      500
      0,87 US$
      433,35 US$
      1000
      0,82 US$
      815,80 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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