PartNumber | SISS64DN-T1-GE3 | SISS60DN-T1-GE3 | SISS61DN-T1-GE3 |
Description | MOSFET 30V Vds 20V Vgs PowerPAK 1212-8S | MOSFET N-Channel 30 V (D-S) MOSFET with Schottky Diode | MOSFET Pch 20V Vds 8V Vgs PowerPAK 1212-8S |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | E | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | PowerPAK-1212-8 | PowerPAK-1212-8 | SiSS61DN-T1-GE3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | P-Channel |
Vds Drain Source Breakdown Voltage | 30 V | 30 V | - 20 V |
Id Continuous Drain Current | 40 A | 181.8 A | - 111.9 A |
Rds On Drain Source Resistance | 1.8 mOhms | 1.31 mOhms | 2.9 mOhms |
Vgs th Gate Source Threshold Voltage | 1.1 V | 1 V | - 0.9 V |
Vgs Gate Source Voltage | 20 V, - 16 V | - 12 V, 16 V | 8 V |
Qg Gate Charge | 68 nC | 57 nC | 154 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 57 W | 65.8 W | - |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Tradename | TrenchFET, PowerPAK | PowerPAK | - |
Packaging | Reel | Reel | Reel |
Series | SIS | - | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Forward Transconductance Min | 70 S | 84 S | - |
Fall Time | 10 ns | 6 ns | 15 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 15 ns | 7 ns | 10 ns |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 25 ns | 30 ns | 90 ns |
Typical Turn On Delay Time | 13 ns | 18 ns | 15 ns |