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SISS64DN-T1-GE3

SISS64DN-T1-GE3
Mfr. #:
SISS64DN-T1-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 30V Vds 20V Vgs PowerPAK 1212-8S
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SISS64DN-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SISS64DN-T1-GE3 DatasheetSISS64DN-T1-GE3 Datasheet (P4-P6)SISS64DN-T1-GE3 Datasheet (P7)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
PowerPAK-1212-8
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
30 V
Id - Corriente de drenaje continua:
40 A
Rds On - Resistencia de la fuente de drenaje:
1.8 mOhms
Vgs th - Voltaje umbral puerta-fuente:
1.1 V
Vgs - Voltaje puerta-fuente:
20 V, - 16 V
Qg - Carga de puerta:
68 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
57 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
TrenchFET, PowerPAK
Embalaje:
Carrete
Serie:
SIS
Tipo de transistor:
1 N-Channel
Marca:
Vishay / Siliconix
Transconductancia directa - Mín .:
70 S
Otoño:
10 ns
Tipo de producto:
MOSFET
Hora de levantarse:
15 ns
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
25 ns
Tiempo típico de retardo de encendido:
13 ns
Tags
SISS6, SISS, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
TrenchFET Gen IV Power MOSFET N-Channel Single 30V VDS +20V -16V VGS 40A ID 8-Pin PowerPAK 1212 T/R
***ical
Trans MOSFET N-CH 30V 40A 8-Pin PowerPAK 1212-S T/R
***i-Key
MOSFET N-CHANNEL 30V 40A 1212-8S
***ark
Mosfet, N-Ch, 30V, 40A, 150Deg C, 57W; Transistor Polarity:n Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.0018Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 30V, 40A, 150DEG C, 57W; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0018ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power Dissipation Pd:57W; Transistor Case Style:PowerPAK 1212; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Gen IV Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CANAL N, 30V, 40A, 150°C, 57W; Polarità Transistor:Canale N; Corrente Continua di Drain Id:40A; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):0.0018ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2.2V; Dissipazione di Potenza Pd:57W; Modello Case Transistor:PowerPAK 1212; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:TrenchFET Gen IV Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
Parte # Mfg. Descripción Valores Precio
SISS64DN-T1-GE3
DISTI # V72:2272_21388895		Vishay IntertechnologiesSISS64DN-T1-GE35972
  • 75000:$0.5084
  • 30000:$0.5094
  • 15000:$0.5106
  • 6000:$0.5117
  • 3000:$0.5128
  • 1000:$0.6029
  • 500:$0.7094
  • 250:$0.8491
  • 100:$0.8581
  • 50:$0.9082
  • 25:$1.0092
  • 10:$1.1213
  • 1:$1.3363
SISS64DN-T1-GE3
DISTI # V99:2348_21388895		Vishay IntertechnologiesSISS64DN-T1-GE30
  • 6000:$0.5838
SISS64DN-T1-GE3
DISTI # SISS64DN-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CHANNEL 30V 40A 1212-8S
Min Qty: 1
Container: Cut Tape (CT)		11784In Stock
  • 1000:$0.6154
  • 500:$0.7795
  • 100:$0.9436
  • 10:$1.2100
  • 1:$1.3500
SISS64DN-T1-GE3
DISTI # SISS64DN-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CHANNEL 30V 40A 1212-8S
Min Qty: 1
Container: Digi-Reel®		11784In Stock
  • 1000:$0.6154
  • 500:$0.7795
  • 100:$0.9436
  • 10:$1.2100
  • 1:$1.3500
SISS64DN-T1-GE3
DISTI # SISS64DN-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CHANNEL 30V 40A 1212-8S
Min Qty: 3000
Container: Tape & Reel (TR)		9000In Stock
  • 6000:$0.5297
  • 3000:$0.5576
SISS64DN-T1-GE3
DISTI # 32410161		Vishay IntertechnologiesSISS64DN-T1-GE35972
  • 15000:$0.5106
  • 6000:$0.5117
  • 3000:$0.5128
  • 1000:$0.6029
  • 500:$0.7094
  • 250:$0.8491
  • 100:$0.8581
  • 50:$0.9082
  • 25:$1.0092
  • 12:$1.1213
SISS64DN-T1-GE3
DISTI # SISS64DN-T1-GE3		Vishay IntertechnologiesTrenchFET Gen IV Power MOSFET N-Channel Single 30V VDS +20V -16V VGS 40A ID8-Pin PowerPAK 1212 T/R (Alt: SISS64DN-T1-GE3)
RoHS: Compliant
Min Qty: 6000
Container: Tape and Reel		Asia - 0
    SISS64DN-T1-GE3
    DISTI # SISS64DN-T1-GE3    		Vishay IntertechnologiesTrenchFET Gen IV Power MOSFET N-Channel Single 30V VDS +20V -16V VGS 40A ID8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SISS64DN-T1-GE3)
    RoHS: Compliant
    Min Qty: 6000
    Container: Reel    		Americas - 0
    • 60000:$0.5106
    • 30000:$0.5248
    • 18000:$0.5397
    • 12000:$0.5626
    • 6000:$0.5798
    SISS64DN-T1-GE3
    DISTI # 59AC7457    		Vishay IntertechnologiesN-CHANNEL 30-V (D-S) MOSFET
    RoHS: Not Compliant    		0
    • 10000:$0.5060
    • 6000:$0.5180
    • 4000:$0.5380
    • 2000:$0.5980
    • 1000:$0.6580
    • 1:$0.6850
    SISS64DN-T1-GE3
    DISTI # 81AC2797    		Vishay IntertechnologiesMOSFET, N-CH, 30V, 40A, 150DEG C, 57W,Transistor Polarity:N Channel,Continuous Drain Current Id:40A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0018ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.2V,Power RoHS Compliant: Yes
    RoHS: Compliant    		6050
    • 2500:$0.5250
    • 1000:$0.5710
    • 500:$0.6620
    • 100:$0.7570
    • 50:$0.8560
    • 25:$0.9440
    • 10:$1.0300
    • 1:$1.3400
    SISS64DN-T1-GE3
    DISTI # 78-SISS64DN-T1-GE3    		Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAK 1212-8S
    RoHS: Compliant    		3440
    • 1:$1.3500
    • 10:$1.1300
    • 100:$0.8980
    • 500:$0.7570
    • 1000:$0.6040
    • 3000:$0.5570
    • 6000:$0.5290
    SISS64DN-T1-GE3
    DISTI # 2932962    		Vishay IntertechnologiesMOSFET, N-CH, 30V, 40A, 150DEG C, 57W
    RoHS: Compliant    		6050
    • 3000:$0.8390
    • 1000:$0.8560
    • 500:$1.0900
    • 100:$1.2700
    • 10:$1.6400
    • 1:$1.9900
    SISS64DN-T1-GE3
    DISTI # 2932962RL    		Vishay IntertechnologiesMOSFET, N-CH, 30V, 40A, 150DEG C, 57W
    RoHS: Compliant    		0
    • 5000:£0.4450
    • 1000:£0.4630
    • 500:£0.5870
    • 250:£0.6360
    • 100:£0.6830
    • 10:£0.9410
    • 1:£1.2300
    SISS64DN-T1-GE3
    DISTI # 2932962    		Vishay IntertechnologiesMOSFET, N-CH, 30V, 40A, 150DEG C, 57W
    RoHS: Compliant    		6050
    • 5000:£0.4450
    • 1000:£0.4630
    • 500:£0.5870
    • 250:£0.6360
    • 100:£0.6830
    • 10:£0.9410
    • 1:£1.2300
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    Disponibilidad
    Valores:
    Available
    En orden:
    1986
    Ingrese la cantidad:
    El precio actual de SISS64DN-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    1,39 US$
    1,39 US$
    10
    1,14 US$
    11,40 US$
    100
    0,88 US$
    88,10 US$
    500
    0,76 US$
    378,50 US$
    1000
    0,60 US$
    598,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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