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SISS67DN-T1-GE3

SISS67DN-T1-GE3
Mfr. #:
SISS67DN-T1-GE3
Fabricante:
Vishay
Descripción:
MOSFET P-CHAN 30V POWERPAK 1212-
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SISS67DN-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
SISS67DN-T1-GE3 más información
Atributo del producto
Valor de atributo
Tags
SISS6, SISS, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET® P-Channel MOSFETs
Vishay Siliconix TrenchFET® P-Channel MOSFETs feature the newest generation of P-channel silicon technology. This enables these devices to provide industry-best on-resistance specifications like 1.9 milliohms in the PowerPAK® SO-8. The P-channel MOSFETs have on-resistance as low as half the level of the next best devices on the market. These MOSFETs are available in two variants that employ either Generation III or Generation IV technology. The Gen-IV P-channel MOSFETs offer low on-resistance and come in a thermally enhanced compact package.
Parte # Mfg. Descripción Valores Precio
SISS67DN-T1-GE3
DISTI # SISS67DN-T1-GE3CT-ND		Vishay SiliconixMOSFET P-CHAN 30V POWERPAK 1212-
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		8958In Stock
  • 1000:$0.5147
  • 500:$0.6520
  • 100:$0.7893
  • 10:$1.0120
  • 1:$1.1300
SISS67DN-T1-GE3
DISTI # SISS67DN-T1-GE3DKR-ND		Vishay SiliconixMOSFET P-CHAN 30V POWERPAK 1212-
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		8958In Stock
  • 1000:$0.5147
  • 500:$0.6520
  • 100:$0.7893
  • 10:$1.0120
  • 1:$1.1300
SISS67DN-T1-GE3
DISTI # SISS67DN-T1-GE3TR-ND		Vishay SiliconixMOSFET P-CHAN 30V POWERPAK 1212-
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 15000:$0.4264
  • 6000:$0.4431
  • 3000:$0.4664
SISS67DN-T1-GE3
DISTI # SISS67DN-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH -30V -60A 8-Pin PowerPAK 1212 - Tape and Reel (Alt: SISS67DN-T1-GE3)
RoHS: Compliant
Min Qty: 6000
Container: Reel		Americas - 0
  • 60000:$0.4059
  • 30000:$0.4179
  • 18000:$0.4289
  • 12000:$0.4479
  • 6000:$0.4609
SISS67DN-T1-GE3
DISTI # SISS67DN-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH -30V -60A 8-Pin PowerPAK 1212 (Alt: SISS67DN-T1-GE3)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€0.4429
  • 500:€0.4489
  • 100:€0.4569
  • 50:€0.4629
  • 25:€0.5239
  • 10:€0.6459
  • 1:€0.9009
SISS67DN-T1-GE3
DISTI # 81AC3506		Vishay IntertechnologiesP-CHANNEL 30-V (D-S) MOSFET0
  • 10000:$0.4030
  • 6000:$0.4130
  • 4000:$0.4290
  • 2000:$0.4760
  • 1000:$0.5240
  • 1:$0.5460
SISS67DN-T1-GE3
DISTI # 78AC6533		Vishay IntertechnologiesMOSFET, P-CH, -30V, -60A, 150DEG C,Transistor Polarity:P Channel,Continuous Drain Current Id:-60A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.0046ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-2.5V,Power RoHS Compliant: Yes6000
  • 500:$0.6090
  • 250:$0.6590
  • 100:$0.7090
  • 50:$0.7800
  • 25:$0.8520
  • 10:$0.9230
  • 1:$1.1200
SISS67DN-T1-GE3
DISTI # 78-SISS67DN-T1-GE3		Vishay IntertechnologiesMOSFET -30V Vds 25V Vgs PowerPAK 1212-8S
RoHS: Compliant		5177
  • 1:$1.1100
  • 10:$0.9140
  • 100:$0.7020
  • 500:$0.6030
  • 1000:$0.4760
  • 3000:$0.4450
SISS67DN-T1-GE3
DISTI # 2932963		Vishay IntertechnologiesMOSFET, P-CH, -30V, -60A, 150DEG C
RoHS: Compliant		6000
  • 1000:$0.7390
  • 500:$0.7810
  • 250:$0.9180
  • 100:$1.1200
  • 10:$1.4300
  • 1:$1.7200
SISS67DN-T1-GE3
DISTI # 2932963		Vishay IntertechnologiesMOSFET, P-CH, -30V, -60A, 150DEG C6000
  • 500:£0.4370
  • 250:£0.4730
  • 100:£0.5090
  • 10:£0.7150
  • 1:£0.9190
Imagen Parte # Descripción
SISS67DN-T1-GE3

Mfr.#: SISS67DN-T1-GE3

OMO.#: OMO-SISS67DN-T1-GE3

 MOSFET -30V Vds 25V Vgs PowerPAK 1212-8S
SISS67DN-T1-GE3

Mfr.#: SISS67DN-T1-GE3

OMO.#: OMO-SISS67DN-T1-GE3-VISHAY

 MOSFET P-CHAN 30V POWERPAK 1212-
Disponibilidad
Valores:
Available
En orden:
1500
Ingrese la cantidad:
El precio actual de SISS67DN-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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