 |  | | |
| PartNumber | SIJ470DP-T1-GE3 | SIJ470DP | SIJ470DPT1GE3 |
| Description | MOSFET 100V 9.1mOhm@10V 58.8A N-CH | Power Field-Effect Transisto | |
| Manufacturer | Vishay | Vishay / Siliconix | - |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | PowerPAK-SO-8 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 58.8 A | - | - |
| Rds On Drain Source Resistance | 7.6 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.3 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 56 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 56.8 W | - | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | ThunderFET, PowerPAK | ThunderFET TrenchFET | - |
| Packaging | Reel | Reel | - |
| Series | SIJ | Power MOSFET | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 60 S | - | - |
| Fall Time | 7 ns | 7 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 8 ns | 8 ns | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 22 ns | 22 ns | - |
| Typical Turn On Delay Time | 12 ns | 12 ns | - |
| Unit Weight | 0.017870 oz | 0.017870 oz | - |
| Package Case | - | SO-8 | - |
| Pd Power Dissipation | - | 56.8 W | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 58.8 A | - |
| Vds Drain Source Breakdown Voltage | - | 100 V | - |
| Vgs th Gate Source Threshold Voltage | - | 3.5 V | - |
| Rds On Drain Source Resistance | - | 9.1 mOhms | - |
| Qg Gate Charge | - | 36.9 nC | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIJ470DP-T1-GE3 | MOSFET 100V 9.1mOhm@10V 58.8A N-CH | |
Vishay |
SIJ470DP-T1-GE3 | IGBT Transistors MOSFET 100V 9.1mOhm@10V 58.8A N-CH | |
| SIJ470DP | Nuevo y original | ||
| SIJ470DPT1GE3 | Power Field-Effect Transisto |