 |  | | |
| PartNumber | SIJ438ADP-T1-GE3 | SIJ400DP-T1-GE3 | SIJ420DP-T1-GE3 |
| Description | MOSFET 40V Vds; 20/-16V Vgs PowerPAK SO-8L | MOSFET RECOMMENDED ALT 781-SIR466DP-T1-GE3 | MOSFET N-CHANNEL 20-V (D-S) MOSFET |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | E | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PowerPAK SO-8 | PowerPAK-SO-8L-4 | PowerPAK-SO-8L-4 |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 40 V | - | - |
| Id Continuous Drain Current | 45.3 A | - | - |
| Rds On Drain Source Resistance | 1.35 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.1 V | - | - |
| Vgs Gate Source Voltage | 20 V, - 16 V | - | - |
| Qg Gate Charge | 162 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 69.4 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | Reel | Reel |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 130 S | - | - |
| Fall Time | 8 ns | - | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 8 ns | - | - |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 51 ns | - | - |
| Typical Turn On Delay Time | 17 ns | - | - |
| Tradename | - | TrenchFET, PowerPAK | TrenchFET, PowerPAK |
| Height | - | 1.04 mm | 1.04 mm |
| Length | - | 6.15 mm | 6.15 mm |
| Series | - | SIJ | SIJ |
| Width | - | 5.13 mm | 5.13 mm |
| Part # Aliases | - | SIJ400DP-GE3 | - |
| Unit Weight | - | 0.017870 oz | 0.017870 oz |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIJ438DP-T1-GE3 | MOSFET 40V Vds 20V Vgs PowerPAK SO-8L | |
| SIJ494DP-T1-GE3 | MOSFET N-Ch 150V Vds 16.1nC Qg Typ | ||
| SIJ462DP-T1-GE3 | MOSFET 60V Vds 20V Vgs PowerPAK SO-8L | ||
| SIJ470DP-T1-GE3 | MOSFET 100V 9.1mOhm@10V 58.8A N-CH | ||
| SIJ478DP-T1-GE3 | MOSFET 80V Vds 20V Vgs PowerPAK SO-8L | ||
| SIJ482DP-T1-GE3 | MOSFET 80V Vds 20V Vgs PowerPAK SO-8L | ||
| SIJ438ADP-T1-GE3 | MOSFET 40V Vds; 20/-16V Vgs PowerPAK SO-8L | ||
| SIJ484DP-T1-GE3 | MOSFET | ||
| SIJ400DP-T1-GE3 | MOSFET RECOMMENDED ALT 781-SIR466DP-T1-GE3 | ||
| SIJ420DP-T1-GE3 | MOSFET N-CHANNEL 20-V (D-S) MOSFET | ||
Vishay |
SIJ470DP-T1-GE3 | IGBT Transistors MOSFET 100V 9.1mOhm@10V 58.8A N-CH | |
| SIJ478DP-T1-GE3 | RF Bipolar Transistors MOSFET 80V 8.0mOhm@10V 60A N-CH | ||
| SIJ458DP-T1-GE3 | RF Bipolar Transistors MOSFET 30V 60A 69.4W | ||
| SIJ420DP-T1-GE3 | RF Bipolar Transistors MOSFET N-CHANNEL 20-V (D-S) MOSFET | ||
| SIJ462DP-T1-GE3 | RF Bipolar Transistors MOSFET 60V 8.0mOhm@10V 46.5A N-CH | ||
| SIJ438ADP-T1-GE3 | MOSFET N-CHAN 40-V POWERPAK SO-8 | ||
| SIJ494DP-T1-GE3 | MOSFET N-CH 150V 36.8A SO-8 | ||
| SIJ400DP-T1-GE3 | MOSFET N-CH 30V 32A PPAK SO-8 | ||
| SIJ438DP-T1-GE3 | MOSFET N-CH 40V 80A PPAK SO-8L | ||
| SIJ482DP-T1-GE3 | MOSFET N-CH 80V 60A PPAK SO-8 | ||
| SIJ484DP-T1-GE3 | MOSFET N-CH 30V 35A PPAK SO-8 | ||
| SIJ400 | Nuevo y original | ||
| SIJ400DP | Nuevo y original | ||
| SIJ42ODP-T1-GE3 | Nuevo y original | ||
| SIJ438DP | Nuevo y original | ||
| SIJ438DPT1GE3 | Power Field-Effect Transisto | ||
| SIJ458DP-T1 | Nuevo y original | ||
| SIJ458DP-T1-E3 | Nuevo y original | ||
| SIJ461DP-T1-GE3 | Nuevo y original | ||
| SIJ470DP | Nuevo y original | ||
| SIJ470DPT1GE3 | Power Field-Effect Transisto | ||
| SIJ478DP | Nuevo y original | ||
| SIJ478DP-T1-E3 | Nuevo y original | ||
| SIJ478DPT1GE3 | Power Field-Effect Transistor, 60A I(D), 80V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| SIJ482DP | Nuevo y original | ||
| SIJ482DPT1GE3 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |