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SIJ470DP-T1-GE3

SIJ470DP-T1-GE3
Mfr. #:
SIJ470DP-T1-GE3
Fabricante:
Vishay
Descripción:
IGBT Transistors MOSFET 100V 9.1mOhm@10V 58.8A N-CH
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIJ470DP-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
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ECAD Model:
Más información:
SIJ470DP-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante
Vishay / Siliconix
categoria de producto
Transistores - FET, MOSFET - Sencillo
Serie
MOSFET de potencia
embalaje
Carrete
Unidad de peso
0.017870 oz
Estilo de montaje
SMD / SMT
Nombre comercial
ThunderFET TrenchFET
Paquete-Estuche
SO-8
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
56.8 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
7 ns
Hora de levantarse
8 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
58.8 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Vgs-th-Gate-Source-Threshold-Voltage
3.5 V
Resistencia a la fuente de desagüe de Rds
9.1 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
22 ns
Tiempo de retardo de encendido típico
12 ns
Qg-Gate-Charge
36.9 nC
Modo de canal
Mejora
Tags
SIJ470, SIJ47, SIJ4, SIJ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 100 V 9.1 mOhm 56.8 W SMT ThunderFET Mosfet - PowerPAK SO-8
***ical
Trans MOSFET N-CH 100V 17.4A 5-Pin(4+Tab) PowerPAK SO
***i-Key
MOSFET N-CH 100V 58.8A PPAK SO-8
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
ThunderFET® Power MOSFETs
Vishay Siliconix ThunderFET® Power MOSFETs offer the lowest values of on-resistance in the industry for 100V MOSFETs with 4.5V ratings. In addition to the product of on-resistance and gate charge - a key figure-of-merit (FOM) for MOSFETs in DC-DC Converter applications is also best in class. For designers, the lower on-resistance translates into lower conduction losses and reduced power consumption for energy-saving green solutions. These devices are optimized for primary side switching and secondary side synchronous rectification in isolated DC/DC power supply designs for telecom brick and bus converter applications. The MOSFETs' 4.5 V rating for on-resistance allows a wide range of PWM and gate driver ICs to be considered.
Parte # Mfg. Descripción Valores Precio
SIJ470DP-T1-GE3
DISTI # SIJ470DP-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 100V 58.8A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		964In Stock
  • 1000:$0.7988
  • 500:$1.0118
  • 100:$1.3046
  • 10:$1.6510
  • 1:$1.8600
SIJ470DP-T1-GE3
DISTI # SIJ470DP-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 100V 58.8A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		964In Stock
  • 1000:$0.7988
  • 500:$1.0118
  • 100:$1.3046
  • 10:$1.6510
  • 1:$1.8600
SIJ470DP-T1-GE3
DISTI # SIJ470DP-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 100V 58.8A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.7238
SIJ470DP-T1-GE3
DISTI # SIJ470DP-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 100V 17.4A 5-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIJ470DP-T1-GE3)
RoHS: Compliant
Min Qty: 6000
Container: Reel		Americas - 0
  • 6000:$0.6839
  • 12000:$0.6629
  • 18000:$0.6359
  • 30000:$0.6189
  • 60000:$0.6019
SIJ470DP-T1-GE3
DISTI # 78-SIJ470DP-T1-GE3		Vishay IntertechnologiesMOSFET 100V 9.1mOhm@10V 58.8A N-CH
RoHS: Compliant		4267
  • 1:$1.6500
  • 10:$1.3600
  • 100:$1.0400
  • 500:$0.8940
  • 1000:$0.7850
  • 3000:$0.7840
SIJ470DPT1GE3Vishay IntertechnologiesPower Field-Effect Transistor
RoHS: Compliant		Europe - 6000
    SIJ470DP-T1-GE3Vishay IntertechnologiesMOSFET 100V 9.1mOhm@10V 58.8A N-CH
    RoHS: Compliant    		Americas -
    • 3000:$0.6580
    • 12000:$0.5920
    Imagen Parte # Descripción
    SIJ470DP-T1-GE3

    Mfr.#: SIJ470DP-T1-GE3

    OMO.#: OMO-SIJ470DP-T1-GE3

    		 MOSFET 100V 9.1mOhm@10V 58.8A N-CH
    SIJ470DP-T1-GE3

    Mfr.#: SIJ470DP-T1-GE3

    OMO.#: OMO-SIJ470DP-T1-GE3-VISHAY

    		 IGBT Transistors MOSFET 100V 9.1mOhm@10V 58.8A N-CH
    SIJ470DP

    Mfr.#: SIJ470DP

    OMO.#: OMO-SIJ470DP-1190

    		 Nuevo y original
    SIJ470DPT1GE3

    Mfr.#: SIJ470DPT1GE3

    OMO.#: OMO-SIJ470DPT1GE3-1190

    		 Power Field-Effect Transisto
    Disponibilidad
    Valores:
    Available
    En orden:
    5500
    Ingrese la cantidad:
    El precio actual de SIJ470DP-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,89 US$
    0,89 US$
    10
    0,84 US$
    8,44 US$
    100
    0,80 US$
    79,92 US$
    500
    0,75 US$
    377,40 US$
    1000
    0,71 US$
    710,40 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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