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Parte # | Mfg. | Descripción | Valores | Precio |
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SIJ470DP-T1-GE3 DISTI # V36:1790_09216132 | Vishay Intertechnologies | Trans MOSFET N-CH 100V 17.4A 5-Pin(4+Tab) PowerPAK SO RoHS: Compliant | 0 |
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SIJ470DP-T1-GE3 DISTI # SIJ470DP-T1-GE3CT-ND | Vishay Siliconix | MOSFET N-CH 100V 58.8A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 204In Stock |
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SIJ470DP-T1-GE3 DISTI # SIJ470DP-T1-GE3DKR-ND | Vishay Siliconix | MOSFET N-CH 100V 58.8A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 204In Stock |
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SIJ470DP-T1-GE3 DISTI # SIJ470DP-T1-GE3TR-ND | Vishay Siliconix | MOSFET N-CH 100V 58.8A PPAK SO-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR) | On Order |
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SIJ470DP-T1-GE3 DISTI # SIJ470DP-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 100V 17.4A 5-Pin PowerPAK SO T/R (Alt: SIJ470DP-T1-GE3) RoHS: Compliant Min Qty: 1 Container: Tape and Reel | Europe - 0 |
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SIJ470DP-T1-GE3 DISTI # SIJ470DP-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 100V 17.4A 5-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIJ470DP-T1-GE3) RoHS: Compliant Min Qty: 6000 Container: Reel | Americas - 0 |
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SIJ470DP-T1-GE3 DISTI # 78-SIJ470DP-T1-GE3 | Vishay Intertechnologies | MOSFET 100V 9.1mOhm@10V 58.8A N-CH RoHS: Compliant | 3706 |
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SIJ470DP-T1-GE3 | Vishay Siliconix | 2942 | ||
SIJ470DPT1GE3 | Vishay Intertechnologies | Power Field-Effect Transistor RoHS: Compliant | 6000 | |
SIJ470DP-T1-GE3 | Vishay Intertechnologies | MOSFET 100V 9.1mOhm@10V 58.8A N-CH RoHS: Compliant | Americas - |
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Imagen | Parte # | Descripción |
---|---|---|
Mfr.#: SIJ470DP-T1-GE3 OMO.#: OMO-SIJ470DP-T1-GE3 |
MOSFET 100V 9.1mOhm@10V 58.8A N-CH | |
Mfr.#: SIJ470DP-T1-GE3 OMO.#: OMO-SIJ470DP-T1-GE3-VISHAY |
IGBT Transistors MOSFET 100V 9.1mOhm@10V 58.8A N-CH | |
Mfr.#: SIJ470DP OMO.#: OMO-SIJ470DP-1190 |
Nuevo y original | |
Mfr.#: SIJ470DPT1GE3 OMO.#: OMO-SIJ470DPT1GE3-1190 |
Power Field-Effect Transisto |