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| PartNumber | SI6973DQ-T1-E3 | SI6973DQ-T1-GE3 | SI6973DQ-T1 |
| Description | MOSFET RECOMMENDED ALT 781-SI6913DQ-GE3 | MOSFET 2P-CH 20V 4.1A 8TSSOP | MOSFET RECOMMENDED ALT 781-SI6913DQ-GE3 |
| Manufacturer | Vishay | Vishay Siliconix | Vishay Siliconix |
| Product Category | MOSFET | FETs - Arrays | FETs - Arrays |
| RoHS | Y | - | - |
| Technology | Si | Si | Si |
| Tradename | TrenchFET | - | TrenchFET |
| Packaging | Reel | Tape & Reel (TR) | Tape & Reel (TR) |
| Series | SI6 | TrenchFETR | TrenchFETR |
| Brand | Vishay / Siliconix | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | SI6973DQ-E3 | - | - |
| Unit Weight | 0.005573 oz | 0.005573 oz | 0.005573 oz |
| Part Aliases | - | SI6973DQ-GE3 | SI6973DQ-E3 |
| Mounting Style | - | SMD/SMT | SMD/SMT |
| Package Case | - | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP (0.173", 4.40mm Width) |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | - | Surface Mount | Surface Mount |
| Number of Channels | - | 2 Channel | 2 Channel |
| Supplier Device Package | - | 8-TSSOP | 8-TSSOP |
| Configuration | - | Dual | Dual |
| FET Type | - | 2 P-Channel (Dual) | 2 P-Channel (Dual) |
| Power Max | - | 830mW | 830mW |
| Transistor Type | - | 2 P-Channel | 2 P-Channel |
| Drain to Source Voltage Vdss | - | 20V | 20V |
| Input Capacitance Ciss Vds | - | - | - |
| FET Feature | - | Logic Level Gate | Logic Level Gate |
| Current Continuous Drain Id 25°C | - | 4.1A | 4.1A |
| Rds On Max Id Vgs | - | 30 mOhm @ 4.8A, 4.5V | 30 mOhm @ 4.8A, 4.5V |
| Vgs th Max Id | - | 450mV @ 250μA (Min) | 450mV @ 250μA (Min) |
| Gate Charge Qg Vgs | - | 30nC @ 4.5V | 30nC @ 4.5V |
| Pd Power Dissipation | - | 830 mW | 830 mW |
| Maximum Operating Temperature | - | + 150 C | + 150 C |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Vgs Gate Source Voltage | - | 8 V | 8 V |
| Id Continuous Drain Current | - | 4.1 A | 4.1 A |
| Vds Drain Source Breakdown Voltage | - | - 20 V | - 20 V |
| Rds On Drain Source Resistance | - | 30 mOhms | 30 mOhms |
| Transistor Polarity | - | P-Channel | P-Channel |
| Fall Time | - | - | 27 ns |
| Rise Time | - | - | 27 ns |
| Typical Turn Off Delay Time | - | - | 93 ns |
| Typical Turn On Delay Time | - | - | 27 ns |
| Channel Mode | - | - | Enhancement |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI6973DQ-T1-E3 | MOSFET RECOMMENDED ALT 781-SI6913DQ-GE3 | |
Vishay |
SI6973DQ-T1-E3 | RF Bipolar Transistors MOSFET 20V 4.8A 4.8W | |
| SI6973DQ-T1-GE3 | MOSFET 2P-CH 20V 4.1A 8TSSOP | ||
| SI6973DQ-T1 | MOSFET RECOMMENDED ALT 781-SI6913DQ-GE3 |