PartNumber | SI6973DQ-T1-E3 | SI6975DQ-T1-E3 | SI6973DQ-T1-GE3 |
Description | MOSFET RECOMMENDED ALT 781-SI6913DQ-GE3 | MOSFET RECOMMENDED ALT 781-SI6913DQ-GE3 | MOSFET 2P-CH 20V 4.1A 8TSSOP |
Manufacturer | Vishay | Vishay | Vishay Siliconix |
Product Category | MOSFET | MOSFET | FETs - Arrays |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Tradename | TrenchFET | TrenchFET | - |
Packaging | Reel | Reel | Tape & Reel (TR) |
Series | SI6 | SI6 | TrenchFETR |
Brand | Vishay / Siliconix | Vishay / Siliconix | - |
Product Type | MOSFET | MOSFET | - |
Factory Pack Quantity | 3000 | 3000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Part # Aliases | SI6973DQ-E3 | SI6975DQ-E3 | - |
Unit Weight | 0.005573 oz | 0.005573 oz | 0.005573 oz |
Mounting Style | - | SMD/SMT | SMD/SMT |
Package / Case | - | TSSOP-8 | - |
Height | - | 1.2 mm | - |
Length | - | 4.4 mm | - |
Width | - | 3 mm | - |
Part Aliases | - | - | SI6973DQ-GE3 |
Package Case | - | - | 8-TSSOP (0.173", 4.40mm Width) |
Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
Mounting Type | - | - | Surface Mount |
Number of Channels | - | - | 2 Channel |
Supplier Device Package | - | - | 8-TSSOP |
Configuration | - | - | Dual |
FET Type | - | - | 2 P-Channel (Dual) |
Power Max | - | - | 830mW |
Transistor Type | - | - | 2 P-Channel |
Drain to Source Voltage Vdss | - | - | 20V |
Input Capacitance Ciss Vds | - | - | - |
FET Feature | - | - | Logic Level Gate |
Current Continuous Drain Id 25°C | - | - | 4.1A |
Rds On Max Id Vgs | - | - | 30 mOhm @ 4.8A, 4.5V |
Vgs th Max Id | - | - | 450mV @ 250μA (Min) |
Gate Charge Qg Vgs | - | - | 30nC @ 4.5V |
Pd Power Dissipation | - | - | 830 mW |
Maximum Operating Temperature | - | - | + 150 C |
Minimum Operating Temperature | - | - | - 55 C |
Vgs Gate Source Voltage | - | - | 8 V |
Id Continuous Drain Current | - | - | 4.1 A |
Vds Drain Source Breakdown Voltage | - | - | - 20 V |
Rds On Drain Source Resistance | - | - | 30 mOhms |
Transistor Polarity | - | - | P-Channel |