SI6973D

SI6973DQ-T1-E3 vs SI6973DQ-T1-GE3 vs SI6973DQ

 
PartNumberSI6973DQ-T1-E3SI6973DQ-T1-GE3SI6973DQ
DescriptionMOSFET RECOMMENDED ALT 781-SI6913DQ-GE3MOSFET 2P-CH 20V 4.1A 8TSSOP
ManufacturerVishayVishay Siliconix-
Product CategoryMOSFETFETs - Arrays-
RoHSY--
TechnologySiSi-
TradenameTrenchFET--
PackagingReelTape & Reel (TR)-
SeriesSI6TrenchFETR-
BrandVishay / Siliconix--
Product TypeMOSFET--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Part # AliasesSI6973DQ-E3--
Unit Weight0.005573 oz0.005573 oz-
Part Aliases-SI6973DQ-GE3-
Mounting Style-SMD/SMT-
Package Case-8-TSSOP (0.173", 4.40mm Width)-
Operating Temperature--55°C ~ 150°C (TJ)-
Mounting Type-Surface Mount-
Number of Channels-2 Channel-
Supplier Device Package-8-TSSOP-
Configuration-Dual-
FET Type-2 P-Channel (Dual)-
Power Max-830mW-
Transistor Type-2 P-Channel-
Drain to Source Voltage Vdss-20V-
Input Capacitance Ciss Vds---
FET Feature-Logic Level Gate-
Current Continuous Drain Id 25°C-4.1A-
Rds On Max Id Vgs-30 mOhm @ 4.8A, 4.5V-
Vgs th Max Id-450mV @ 250μA (Min)-
Gate Charge Qg Vgs-30nC @ 4.5V-
Pd Power Dissipation-830 mW-
Maximum Operating Temperature-+ 150 C-
Minimum Operating Temperature-- 55 C-
Vgs Gate Source Voltage-8 V-
Id Continuous Drain Current-4.1 A-
Vds Drain Source Breakdown Voltage-- 20 V-
Rds On Drain Source Resistance-30 mOhms-
Transistor Polarity-P-Channel-
Fabricante Parte # Descripción RFQ
Vishay / Siliconix
Vishay / Siliconix
SI6973DQ-T1-E3 MOSFET RECOMMENDED ALT 781-SI6913DQ-GE3
Vishay
Vishay
SI6973DQ-T1-E3 RF Bipolar Transistors MOSFET 20V 4.8A 4.8W
SI6973DQ-T1-GE3 MOSFET 2P-CH 20V 4.1A 8TSSOP
SI6973DQ Nuevo y original
SI6973DQ-T1 MOSFET RECOMMENDED ALT 781-SI6913DQ-GE3
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