PartNumber | SI6973DQ-T1-E3 | SI6973DQ-T1-GE3 | SI6973DQ |
Description | MOSFET RECOMMENDED ALT 781-SI6913DQ-GE3 | MOSFET 2P-CH 20V 4.1A 8TSSOP | |
Manufacturer | Vishay | Vishay Siliconix | - |
Product Category | MOSFET | FETs - Arrays | - |
RoHS | Y | - | - |
Technology | Si | Si | - |
Tradename | TrenchFET | - | - |
Packaging | Reel | Tape & Reel (TR) | - |
Series | SI6 | TrenchFETR | - |
Brand | Vishay / Siliconix | - | - |
Product Type | MOSFET | - | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | MOSFETs | - | - |
Part # Aliases | SI6973DQ-E3 | - | - |
Unit Weight | 0.005573 oz | 0.005573 oz | - |
Part Aliases | - | SI6973DQ-GE3 | - |
Mounting Style | - | SMD/SMT | - |
Package Case | - | 8-TSSOP (0.173", 4.40mm Width) | - |
Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
Mounting Type | - | Surface Mount | - |
Number of Channels | - | 2 Channel | - |
Supplier Device Package | - | 8-TSSOP | - |
Configuration | - | Dual | - |
FET Type | - | 2 P-Channel (Dual) | - |
Power Max | - | 830mW | - |
Transistor Type | - | 2 P-Channel | - |
Drain to Source Voltage Vdss | - | 20V | - |
Input Capacitance Ciss Vds | - | - | - |
FET Feature | - | Logic Level Gate | - |
Current Continuous Drain Id 25°C | - | 4.1A | - |
Rds On Max Id Vgs | - | 30 mOhm @ 4.8A, 4.5V | - |
Vgs th Max Id | - | 450mV @ 250μA (Min) | - |
Gate Charge Qg Vgs | - | 30nC @ 4.5V | - |
Pd Power Dissipation | - | 830 mW | - |
Maximum Operating Temperature | - | + 150 C | - |
Minimum Operating Temperature | - | - 55 C | - |
Vgs Gate Source Voltage | - | 8 V | - |
Id Continuous Drain Current | - | 4.1 A | - |
Vds Drain Source Breakdown Voltage | - | - 20 V | - |
Rds On Drain Source Resistance | - | 30 mOhms | - |
Transistor Polarity | - | P-Channel | - |