PartNumber | SI4670DY-T1-E3 | SI4670DY-T1-GE3 |
Description | MOSFET 25V Vds 16V Vgs SO-8 | MOSFET 25V Vds 16V Vgs SO-8 |
Manufacturer | Vishay | Vishay |
Product Category | MOSFET | MOSFET |
RoHS | E | Y |
Technology | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT |
Package / Case | SO-8 | SO-8 |
Number of Channels | 2 Channel | - |
Transistor Polarity | N-Channel | - |
Vds Drain Source Breakdown Voltage | 25 V | - |
Id Continuous Drain Current | 7 A | - |
Rds On Drain Source Resistance | 23 mOhms | - |
Vgs th Gate Source Threshold Voltage | 1 V | - |
Vgs Gate Source Voltage | 16 V | - |
Qg Gate Charge | 18 nC | - |
Minimum Operating Temperature | - 55 C | - |
Maximum Operating Temperature | + 150 C | - |
Pd Power Dissipation | 2.8 W | - |
Configuration | Dual | - |
Channel Mode | Enhancement | - |
Tradename | TrenchFET | TrenchFET |
Packaging | Reel | Reel |
Series | SI4 | SI4 |
Transistor Type | 2 N-Channel | - |
Brand | Vishay / Siliconix | Vishay / Siliconix |
Forward Transconductance Min | 23 S | - |
Fall Time | 10 ns | - |
Product Type | MOSFET | MOSFET |
Rise Time | 50 ns | - |
Factory Pack Quantity | 2500 | 2500 |
Subcategory | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 20 ns | - |
Typical Turn On Delay Time | 15 ns | - |
Part # Aliases | SI4670DY-E3 | SI4670DY-GE3 |
Unit Weight | 0.006596 oz | 0.006596 oz |
Height | - | 1.75 mm |
Length | - | 4.9 mm |
Width | - | 3.9 mm |