SI467

SI4670DY-T1-E3 vs SI4670DY-T1-GE3

 
PartNumberSI4670DY-T1-E3SI4670DY-T1-GE3
DescriptionMOSFET 25V Vds 16V Vgs SO-8MOSFET 25V Vds 16V Vgs SO-8
ManufacturerVishayVishay
Product CategoryMOSFETMOSFET
RoHSEY
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CaseSO-8SO-8
Number of Channels2 Channel-
Transistor PolarityN-Channel-
Vds Drain Source Breakdown Voltage25 V-
Id Continuous Drain Current7 A-
Rds On Drain Source Resistance23 mOhms-
Vgs th Gate Source Threshold Voltage1 V-
Vgs Gate Source Voltage16 V-
Qg Gate Charge18 nC-
Minimum Operating Temperature- 55 C-
Maximum Operating Temperature+ 150 C-
Pd Power Dissipation2.8 W-
ConfigurationDual-
Channel ModeEnhancement-
TradenameTrenchFETTrenchFET
PackagingReelReel
SeriesSI4SI4
Transistor Type2 N-Channel-
BrandVishay / SiliconixVishay / Siliconix
Forward Transconductance Min23 S-
Fall Time10 ns-
Product TypeMOSFETMOSFET
Rise Time50 ns-
Factory Pack Quantity25002500
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time20 ns-
Typical Turn On Delay Time15 ns-
Part # AliasesSI4670DY-E3SI4670DY-GE3
Unit Weight0.006596 oz0.006596 oz
Height-1.75 mm
Length-4.9 mm
Width-3.9 mm
Fabricante Parte # Descripción RFQ
Vishay / Siliconix
Vishay / Siliconix
SI4670DY-T1-E3 MOSFET 25V Vds 16V Vgs SO-8
SI4670DY-T1-GE3 MOSFET 25V Vds 16V Vgs SO-8
Vishay
Vishay
SI4670DY-T1-GE3 RF Bipolar Transistors MOSFET Dual N-ChW/ Schottky 25V 23mohms @ 10V
SI4670DY-T1-E3 RF Bipolar Transistors MOSFET 25V 8.0A 2.8W
SI467 Nuevo y original
SI4670 Nuevo y original
SI4670DY Nuevo y original
SI4670DY-T1-E3-S Nuevo y original
SI4670DY-T1-E3.. Nuevo y original
SI4674DY-T1-E3 Nuevo y original
SI467B Nuevo y original
Top