SEMIX3

SEMIX302GAR12E4S vs SEMIX302GB126HDS vs SEMIX302GB126HS

 
PartNumberSEMIX302GAR12E4SSEMIX302GB126HDSSEMIX302GB126HS
Description
Fabricante Parte # Descripción RFQ
SEMIX302GAR12E4S Nuevo y original
SEMIX302GB126HDS Nuevo y original
SEMIX302GB126HS Nuevo y original
SEMIX302GB128D IGBT 4 (Trench)
SEMIX302GB128DS Nuevo y original
SEMIX302GB12E4S Nuevo y original
SEMIX302GB12T4S Nuevo y original
SEMIX302KD16S SEMIX, Trench IGBT Module, 1600V, 300A
SEMIX302KH16S SEMIX, Trench IGBT Module, 1600V, 300A
SEMIX302KT16S SEMIX, Trench Rectifier Thyristor Module, 1600V, 300A
SEMIX303GB12E4 Nuevo y original
SEMIX303GB12E4S IGBT MODULE, DUAL, 1.2KV, 466A, Transistor Polarity:Dual NPN, DC Collector Current:466A, Collector Emitter Saturation Voltage Vce(on):1.8V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)
SEMIX303GB12V Nuevo y original
SEMIX303GB12VS Nuevo y original
SEMIX303GD12E4C Nuevo y original
SEMIX303GD12T4C Nuevo y original
SEMIX303GD12VC Nuevo y original
SEMIX341D16S RECTIFIER MODULE, 1.6KV, 340A, SEMIX 13S, No. of Phases:Three Phase, Repetitive Reverse Voltage Vrrm Max:1.6kV, Forward Current If(AV):340A, Bridge Rectifier Case Style:Module, Forward Voltage VF
SEMIX352GAL128DS Nuevo y original
SEMIX352GAR128DS Nuevo y original
SEMIX352GB128D Nuevo y original
SEMIX352GB128DS IGBT POWER MODULE, Transistor Polarity:N Channel, DC Collector Current:377A, Collector Emitter Saturation Voltage Vce(on):2.35V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ceo:1.15V,
SEMIX353GB126HDS IGBT, 1200 V, 250 A @ 25 DegC, 260 A @ 80 DegC, 1.7 V @ 25 degC
SEMIX353GB126V1 Nuevo y original
SEMIX353GB126V3 Nuevo y original
SEMIX353GB128DS Nuevo y original
SEMIX353GB176HDS Nuevo y original
SEMIX353GD126HDC SEMIX, Trench IGBT Module, 1200V, 300A
SEMIX353GD126HDS Nuevo y original
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