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SEMIX353GB126HDS

SEMIX353GB126HDS
Mfr. #:
SEMIX353GB126HDS
Fabricante:
SEMIKRON
Descripción:
IGBT, 1200 V, 250 A @ 25 DegC, 260 A @ 80 DegC, 1.7 V @ 25 degC
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SEMIX353GB126HDS Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Tags
SEMIX353GB126, SEMIX353GB12, SEMIX353GB, SEMIX353, SEMIX35, SEMIX3, SEMIX, SEMI, SEM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
IGBT, 1200 V, 250 A @ 25 DegC, 260 A @ 80 DegC, 1.7 V @ 25 degC
***ikron
Features: Homogeneous Si Trench = Trenchgate technology V CE(sat) with positive temperature coefficient High short circuit capability UL recognised file no. E63532 Typical Applications: AC inverter drives UPS Electronic Welding
***ark
IGBT MODULE, DUAL, 1.2KV, 364A; Continuous Collector Current:364A; Collector Emitter Saturation Voltage:1.7V; Power Dissipation:-; Operating Temperature Max:125°C; IGBT Termination:Stud; Collector Emitter Voltage Max:1.2kV RoHS Compliant: Yes
***ure Electronics
FF150R12RT4 Series 1200 V 150 A 790 W Surface Mount IGBT Module
***ark
Igbt, Module, N-Ch, 1.2Kv, 150A; Transistor Polarity:n Channel; Dc Collector Current:150A; Collector Emitter Saturation Voltage Vce(On):1.75V; Power Dissipation Pd:790W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Rohs Compliant: Yes
***trelec
Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1.75 / Collector-Emitter Voltage (Vceo) kV = 1.2 / Configuration = Dual / Channel Type = N-Channel / Power Dissipation (Pd) W = 790 / Continuous Collector Current (Ic) A = 150 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 150 / Emitter Leakage Current nA = 100 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tray
***ineon
Our well-known 34 mm 1200V dual IGBT modules with fast trench/fieldstop IGBT4 and Emitter Controlled 4 Diode are the right choice for your design. | Summary of Features: Extended Operation Temperature T vj op; Low Switching Losses; Low V CEsat; T vj op = 150C; V CEsat with positive Temperature Coefficient; Isolated Base Plate; Standard Housing | Benefits: Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; cav; ups; induction-heating; welding
***ical
Trans IGBT Module N-CH 1200V 105A 350000mW 24-Pin EconoPIM3 Tray
***ineon SCT
EconoPIM™ 3 1200V three phase PIM IGBT module with IGBT3 and NTC, AG-ECONO3-3, RoHS
***ment14 APAC
IGBT MODULE, 1200V, ECONOPIM; Transistor Polarity:N Channel; DC Collector Current:105A; Emitter Saturation Voltage Vce(on):2.3V; Power
***ark
IGBT MODULE, 1200V, ECONOPIM; Continuous Collector Current:105A; Collector Emitter Saturation Voltage:2.3V; Power Dissipation:350W; Operating Temperature Max:125°C; IGBT Termination:Press Fit; Collector Emitter Voltage Max:1.2kV RoHS Compliant: Yes
***ineon
EconoPIM 3 1200V three phase PIM IGBT module with IGBT3 and NTC | Summary of Features: Low stray inductance module design; High reliability and power density; Copper base plate for optimized heat spread; Solderable pins; Low switching losses; High switching frequency; RoHS-compliant modules | Benefits: Compact module concept; Optimized customers development cycle time and cost; Configuration flexibility; Fast, reliable and low cost mounting concept | Target Applications: drives; medical; induction; aircon
***ark
IGBT Array & Module Transistor, Dual NPN, 580 A, 1.75 V, 2.4 kW, 1.2 kV, Module
*** Source Electronics
Trans IGBT Module N-CH 1200V 580A 2400000mW 7-Pin 62MM-1 Tray / IGBT MODULE 1200V 450A
***ure Electronics
FF450R12KT4 Series 1200 V 580 A Trench Field-Stop IGBT Module
***nell
IGBT MODULE, DUAL NPN, 1.75V, 580A; Transistor Polarity: Dual NPN; DC Collector Current: 580A; Collector Emitter Saturation Voltage Vce(on): 1.75V; Power Dissipation Pd: 2.4kW; Collector Emitter Voltage V(br)ceo: 1.2kV; Trans
***ineon
Our well-known 62mm C-series 1200V dual IGBT modules with fast trench/fieldstop IGBT4 and Emitter Controlled diode are the right choice for your design. | Summary of Features: Superior solution for frequency controlled inverter drives; UL/CSA Certification with UL1557 E83336; Operating temperature up to 150 C; Optimized switching characteristic like softness and reduced switching losses; Existing packages with higher current capability; RoHS compliant | Benefits: Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; cav; ups; induction-heating; welding
***icontronic
Power Bipolar Transistor, 100A I(C), 125V V(BR)CEO, 1-Element, NPN, Silicon
***ure Electronics
NPN 125 V 100 A Surface Mount Transistor Power Module - ISOTOP
*** Electronic Components
Bipolar Transistors - BJT NPN Power Module
***ow.cn
Trans GP BJT NPN 125V 100A 250000mW 4-Pin ISOTOP Tube
***nell
TRANSISTOR, NPN, ISOTOP; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 200V; Transition Frequency ft: -; Power Dissipation Pd: 250W; DC Collector Current: 100A; DC Current Gain hFE: 27hFE; Transistor Case Style
***ark
BIPOLAR TRANSISTOR, NPN, 200V; Transistor Polarity:NPN; Collector Emitter Voltage Max:200V; Continuous Collector Current:100A; Power Dissipation:250W; Transistor Mounting:Module; No. of Pins:4Pins; Transition Frequency:-; MSL:- RoHS Compliant: Yes
Parte # Mfg. Descripción Valores Precio
SEMIX353GB126HDS
DISTI # 70098309		SEMIKRONIGBT,1200 V,250 A @ 25 DegC,260 A @ 80 DegC,1.7 V @ 25 degC
RoHS: Not Compliant		0
  • 1:$182.0600
  • 6:$172.3300
  • 42:$163.5900
  • 96:$155.7000
  • 144:$148.5300
Imagen Parte # Descripción
SEMIX353GB126HDS

Mfr.#: SEMIX353GB126HDS

OMO.#: OMO-SEMIX353GB126HDS-1190

 IGBT, 1200 V, 250 A @ 25 DegC, 260 A @ 80 DegC, 1.7 V @ 25 degC
SEMIX353GB126V1

Mfr.#: SEMIX353GB126V1

OMO.#: OMO-SEMIX353GB126V1-1190

 Nuevo y original
SEMIX353GB126V3

Mfr.#: SEMIX353GB126V3

OMO.#: OMO-SEMIX353GB126V3-1190

 Nuevo y original
SEMIX353GB128DS

Mfr.#: SEMIX353GB128DS

OMO.#: OMO-SEMIX353GB128DS-1190

 Nuevo y original
SEMIX353GB176HDS

Mfr.#: SEMIX353GB176HDS

OMO.#: OMO-SEMIX353GB176HDS-1190

 Nuevo y original
SEMIX353GD126HDC

Mfr.#: SEMIX353GD126HDC

OMO.#: OMO-SEMIX353GD126HDC-1190

 SEMIX, Trench IGBT Module, 1200V, 300A
SEMIX353GD126HDS

Mfr.#: SEMIX353GD126HDS

OMO.#: OMO-SEMIX353GD126HDS-1190

 Nuevo y original
Disponibilidad
Valores:
Available
En orden:
1000
Ingrese la cantidad:
El precio actual de SEMIX353GB126HDS es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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100
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Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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