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SEMIX303GD12VC

SEMIX303GD12VC
Mfr. #:
SEMIX303GD12VC
Fabricante:
SEMIKRON
Descripción:
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SEMIX303GD12VC Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Tags
SEMIX303GD, SEMIX303, SEMIX30, SEMIX3, SEMIX, SEMI, SEM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
SEMIX; Trench IGBT Module; 1200V; 300A
***hardson RFPD
POWER IGBT TRANSISTOR
***ikron
Features: Homogeneous Si V CE(sat) with positive temperature coefficient High short circuit capability UL recognised file no. E63532 Typical Applications: AC inverter drives UPS Electronic Welding
***ical
Trans IGBT Module N-CH 1200V 995A 4050000mW Automotive 11-Pin ECONOD-3 Tray
***ark
Igbt, Module, N-Ch, 1.2Kv, 995A; Transistor Polarity:n Channel; Dc Collector Current:995A; Collector Emitter Saturation Voltage Vce(On):1.75V; Power Dissipation Pd:4.05Kw; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Rohs Compliant: Yes
***ineon
EconoDUAL3 1200V dual IGBT module with Trench/Fieldstop IGBT4, Emitter Controlled Diode and NTC | Summary of Features: Low V(CEsat); T(vj op) = 150C; V(CEsat) with positive Temperature Coefficient; High Power Density; Isolated Base Plate; Standard Housing | Benefits: Compact Modules; Easy and most reliable assembly; No Plugs and Cables required; Ideal for Low Inductive System Designs | Target Applications: drives; solar; ups; induction-heating; welding
***ure Electronics
FF150R12RT4 Series 1200 V 150 A 790 W Surface Mount IGBT Module
***ark
Igbt, Module, N-Ch, 1.2Kv, 150A; Transistor Polarity:n Channel; Dc Collector Current:150A; Collector Emitter Saturation Voltage Vce(On):1.75V; Power Dissipation Pd:790W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Rohs Compliant: Yes
***trelec
Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1.75 / Collector-Emitter Voltage (Vceo) kV = 1.2 / Configuration = Dual / Channel Type = N-Channel / Power Dissipation (Pd) W = 790 / Continuous Collector Current (Ic) A = 150 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 150 / Emitter Leakage Current nA = 100 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tray
***ineon
Our well-known 34 mm 1200V dual IGBT modules with fast trench/fieldstop IGBT4 and Emitter Controlled 4 Diode are the right choice for your design. | Summary of Features: Extended Operation Temperature T vj op; Low Switching Losses; Low V CEsat; T vj op = 150C; V CEsat with positive Temperature Coefficient; Isolated Base Plate; Standard Housing | Benefits: Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; cav; ups; induction-heating; welding
***ical
Trans IGBT Module N-CH 1200V 105A 350000mW 24-Pin EconoPIM3 Tray
***ineon SCT
EconoPIM™ 3 1200V three phase PIM IGBT module with IGBT3 and NTC, AG-ECONO3-3, RoHS
***ment14 APAC
IGBT MODULE, 1200V, ECONOPIM; Transistor Polarity:N Channel; DC Collector Current:105A; Emitter Saturation Voltage Vce(on):2.3V; Power
***ark
IGBT MODULE, 1200V, ECONOPIM; Continuous Collector Current:105A; Collector Emitter Saturation Voltage:2.3V; Power Dissipation:350W; Operating Temperature Max:125°C; IGBT Termination:Press Fit; Collector Emitter Voltage Max:1.2kV RoHS Compliant: Yes
***ineon
EconoPIM 3 1200V three phase PIM IGBT module with IGBT3 and NTC | Summary of Features: Low stray inductance module design; High reliability and power density; Copper base plate for optimized heat spread; Solderable pins; Low switching losses; High switching frequency; RoHS-compliant modules | Benefits: Compact module concept; Optimized customers development cycle time and cost; Configuration flexibility; Fast, reliable and low cost mounting concept | Target Applications: drives; medical; induction; aircon
***icontronic
Power Bipolar Transistor, 100A I(C), 125V V(BR)CEO, 1-Element, NPN, Silicon
***ure Electronics
NPN 125 V 100 A Surface Mount Transistor Power Module - ISOTOP
*** Electronic Components
Bipolar Transistors - BJT NPN Power Module
***ow.cn
Trans GP BJT NPN 125V 100A 250000mW 4-Pin ISOTOP Tube
***nell
TRANSISTOR, NPN, ISOTOP; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 200V; Transition Frequency ft: -; Power Dissipation Pd: 250W; DC Collector Current: 100A; DC Current Gain hFE: 27hFE; Transistor Case Style
***ark
BIPOLAR TRANSISTOR, NPN, 200V; Transistor Polarity:NPN; Collector Emitter Voltage Max:200V; Continuous Collector Current:100A; Power Dissipation:250W; Transistor Mounting:Module; No. of Pins:4Pins; Transition Frequency:-; MSL:- RoHS Compliant: Yes
***et
Transistor MOSFET Array Dual N-CH 1200V 204A 10-Pin Case C Tray
***i-Key
MOSFET 2N-CH 1200V 180A MODULE
***ukat
SiC-N-Ch-Half-Bridge 1200V 204A C-Pack
***ment14 APAC
MODULE, POWER, SIC, 1200V, 180A
***el Electronic
IC REG CTRLR FLYBK ISO 16-TSSOP
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:1.2Kv; Continuous Drain Current Id:180A; On Resistance Rds(On):-; Rds(On) Test Voltage Vgs:-; Threshold Voltage Vgs:2.7V; Power Dissipation Pd:1.13Kw; Product Range:-; Msl:- Rohs Compliant: Yes
***ark
MOSFET Module, N Channel, 120 A, 1.2 kV, 2.7 V RoHS Compliant: Yes
***et Europe
Transistor MOSFET Array Dual N-CH 1200V 134A 10-Pin Case C Cardboard
***nell
MODULE, POWER, SIC, 1200V, 120A; Transistor Polarity: N Channel; Continuous Drain Current Id: 120A; Drain Source Voltage Vds: 1.2kV; On Resistance Rds(on): -; Rds(on) Test Voltage Vgs: -; Threshold Voltage Vgs: 2.7V; Power Dis
Parte # Mfg. Descripción Valores Precio
SEMIX303GD12VC
DISTI # 71042409		SEMIKRONSEMIX,Trench IGBT Module,1200V,300A
RoHS: Not Compliant		0
  • 1:$677.8900
  • 2:$642.8300
  • 20:$601.3500
  • 40:$564.9000
  • 80:$532.6200
Imagen Parte # Descripción
SEMIX302GB126HDS

Mfr.#: SEMIX302GB126HDS

OMO.#: OMO-SEMIX302GB126HDS-1190

 Nuevo y original
SEMIX302GB126HS

Mfr.#: SEMIX302GB126HS

OMO.#: OMO-SEMIX302GB126HS-1190

 Nuevo y original
SEMIX302GB128D

Mfr.#: SEMIX302GB128D

OMO.#: OMO-SEMIX302GB128D-1190

 IGBT 4 (Trench)
SEMIX302GB128DS

Mfr.#: SEMIX302GB128DS

OMO.#: OMO-SEMIX302GB128DS-1190

 Nuevo y original
SEMIX302KD16S

Mfr.#: SEMIX302KD16S

OMO.#: OMO-SEMIX302KD16S-1190

 SEMIX, Trench IGBT Module, 1600V, 300A
SEMIX302KH16S

Mfr.#: SEMIX302KH16S

OMO.#: OMO-SEMIX302KH16S-1190

 SEMIX, Trench IGBT Module, 1600V, 300A
SEMIX302KT16S

Mfr.#: SEMIX302KT16S

OMO.#: OMO-SEMIX302KT16S-1190

 SEMIX, Trench Rectifier Thyristor Module, 1600V, 300A
SEMIX303GB12E4

Mfr.#: SEMIX303GB12E4

OMO.#: OMO-SEMIX303GB12E4-1190

 Nuevo y original
SEMIX303GB12V

Mfr.#: SEMIX303GB12V

OMO.#: OMO-SEMIX303GB12V-1190

 Nuevo y original
SEMIX303GD12VC

Mfr.#: SEMIX303GD12VC

OMO.#: OMO-SEMIX303GD12VC-1190

 Nuevo y original
Disponibilidad
Valores:
Available
En orden:
1000
Ingrese la cantidad:
El precio actual de SEMIX303GD12VC es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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100
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Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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