SEMI

SEMI vs SEMI-TECHMZ-01 vs SEMI201209U3R3KT

 
PartNumberSEMISEMI-TECHMZ-01SEMI201209U3R3KT
Description
Fabricante Parte # Descripción RFQ
SEMI Nuevo y original
SEMI-TECHMZ-01 Nuevo y original
SEMI201209U3R3KT Nuevo y original
SEMI202GB128DS Nuevo y original
SEMI2606 Nuevo y original
SEMI322513U4R7KT(4.7UH Nuevo y original
SEMI4402A Nuevo y original
SEMI4402BCD Nuevo y original
SEMI6406 Nuevo y original
SEMI8401 Nuevo y original
SEMIBZX84C3V3LT1 Nuevo y original
SEMICONDCTORS Nuevo y original
SEMICONDUCTOR Nuevo y original
SEMICONDUCTOR SELECTION Nuevo y original
SEMICONOUCTOR Nuevo y original
SEMIKRON Nuevo y original
SEMIPACK Nuevo y original
SEMITEC-S-452T; Nuevo y original
SEMITRANSM1 Nuevo y original
SEMIV/R220K Nuevo y original
SEMIX101GD066HDS Nuevo y original
SEMIX101GD126HDS IGBT MODULE, SIX, 1.2KV, 129A, Transistor Polarity:Six NPN, DC Collector Current:129A, Collector Emitter Saturation Voltage Vce(on):1.7V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ce
SEMIX101GD128DC Nuevo y original
SEMIX101GD128DS Nuevo y original
SEMIX101GD12E4S Nuevo y original
SEMIX101GD12T4S Nuevo y original
SEMIX151GB12E4V4 Nuevo y original
SEMIX151GB12T4S Insulated Gate Bipolar Transistor, 230A I(C), 1200V V(BR)CES, N-Channel
SEMIX151GD126HDS SEMIX, Trench IGBT Module, 1200V, 100A
SEMIX151GD128DS Nuevo y original
SEMIX151GD12E4S IGBT MODULE, SIX, 1.2KV, 232A, Transistor Polarity:Six NPN, DC Collector Current:232A, Collector Emitter Saturation Voltage Vce(on):1.8V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ce
SEMIX171KH16S RECTIFIER/THYRISTOR DIODE MODULE, 1600V, SEMIX
SEMIX201GD128DS Nuevo y original
SEMIX202GB066HD Nuevo y original
SEMIX202GB066HDS IGBT MODULE, DUAL, 600V, 275A, Transistor Polarity:Dual NPN, DC Collector Current:275A, Collector Emitter Saturation Voltage Vce(on):1.45V, Power Dissipation Pd:45W, Collector Emitter Voltage V(b
SEMIX202GB128D Nuevo y original
SEMIX202GB128DS Nuevo y original
SEMIX202GB12E4S Nuevo y original
SEMIX202GB12T4S Nuevo y original
SEMIX202GB12V4S Nuevo y original
SEMIX202GB12VS IGBT, MODULE, 1.2KV, 310A, Transistor Polarity:Dual NPN, DC Collector Current:310A, Collector Emitter Saturation Voltage Vce(on):1.75V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ceo:
SEMIX223GD12E4C Nuevo y original
SEMIX241DH16S THYRISTOR DIODE MODULE 300A, 1.6KV, SCR Module Type:Bridge Rectifier, Three Phase - SCR / Diode, Peak Repetitive Off-State Voltage, Vdrm:1.6kV, Gate Trigger Current Max, Igt:150mA, Current It av:2
SEMIX241MD008S Nuevo y original
SEMIX251GD126HDS IGBT, 1200 V, 250 A @ 25 DegC, 260 A @ 80 DegC, 1.7 V @ 25 degC
SEMIX252GB126HD Nuevo y original
SEMIX252GB126HDS IGBT MODULE, DUAL, 1.2KV, 242A, Transistor Polarity:Dual NPN, DC Collector Current:242A, Collector Emitter Saturation Voltage Vce(on):1.7V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)
SEMIX253GB126HD Nuevo y original
SEMIX253GD126HDC Nuevo y original
SEMIX291D16S Nuevo y original
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