 |  |  | |
| PartNumber | IXTY2N100P-TRL | IXTY2N100P | IXTY2N60P |
| Description | Discrete Semiconductor Modules Polar Power MOSFET | MOSFET 2 Amps 1000V 7.5 Rds | IGBT Transistors MOSFET 2.0 Amps 600 V 4.7 Ohm Rds |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | Discrete Semiconductor Modules | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Product | Power MOSFET Modules | - | - |
| Type | Polar | - | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Packaging | Reel | Tube | Tube |
| Configuration | Single | Single | Single |
| Brand | IXYS | IXYS | - |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Fall Time | 27 ns | 27 ns | 23 ns |
| Id Continuous Drain Current | 2 A | 2 A | - |
| Pd Power Dissipation | 86 W | 86 W | - |
| Product Type | Discrete Semiconductor Modules | MOSFET | - |
| Rds On Drain Source Resistance | 7.5 Ohms | 7.5 Ohms | - |
| Rise Time | 29 ns | 29 ns | 20 ns |
| Factory Pack Quantity | 2500 | 70 | - |
| Subcategory | Discrete Semiconductor Modules | MOSFETs | - |
| Tradename | Polar | - | PolarHV |
| Typical Turn Off Delay Time | 80 ns | 80 ns | 60 ns |
| Typical Turn On Delay Time | 25 ns | 25 ns | 28 ns |
| Vds Drain Source Breakdown Voltage | 1000 V | 1 kV | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | - | - |
| Technology | - | Si | Si |
| Number of Channels | - | 1 Channel | 1 Channel |
| Channel Mode | - | Enhancement | Enhancement |
| Height | - | 2.38 mm | - |
| Length | - | 6.73 mm | - |
| Series | - | IXTY2N100 | IXTY2N60 |
| Transistor Type | - | 1 N-Channel | 1 N-Channel |
| Width | - | 6.22 mm | - |
| Unit Weight | - | 0.012346 oz | 0.012346 oz |
| Package Case | - | - | TO-252-3 |
| Pd Power Dissipation | - | - | 55 W |
| Vgs Gate Source Voltage | - | - | 30 V |
| Id Continuous Drain Current | - | - | 2 A |
| Vds Drain Source Breakdown Voltage | - | - | 600 V |
| Vgs th Gate Source Threshold Voltage | - | - | 5 V |
| Rds On Drain Source Resistance | - | - | 5.1 Ohms |
| Qg Gate Charge | - | - | 7 nC |
| Forward Transconductance Min | - | - | 1.4 S |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Littelfuse |
IXTY2N100P-TRL | Discrete Semiconductor Modules Polar Power MOSFET | |
| IXTY2N65X2 | MOSFET DISCMSFT NCHULTRAJNCTN X2CLASS | ||
| IXTY2N100P | MOSFET 2 Amps 1000V 7.5 Rds | ||
| IXTY2N65X2 | MOSFET N-CH 650V 2A X2 TO-252 | ||
| IXTY2N100P | IGBT Transistors MOSFET 2 Amps 1000V 7.5 Rds | ||
| IXTY2N60P | IGBT Transistors MOSFET 2.0 Amps 600 V 4.7 Ohm Rds | ||
| IXTY2N80P | MOSFET 2 Amps 800V 6 Rds |