IXTY2N60P

IXTY2N60P
Mfr. #:
IXTY2N60P
Fabricante:
IXYS
Descripción:
IGBT Transistors MOSFET 2.0 Amps 600 V 4.7 Ohm Rds
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXTY2N60P Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
IXYS
categoria de producto
Transistores - FET, MOSFET - Sencillo
Serie
IXTY2N60
embalaje
Tubo
Unidad de peso
0.012346 oz
Estilo de montaje
SMD / SMT
Nombre comercial
PolarHV
Paquete-Estuche
TO-252-3
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
55 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
23 ns
Hora de levantarse
20 ns
Vgs-Puerta-Fuente-Voltaje
30 V
Id-corriente-de-drenaje-continua
2 A
Vds-Drain-Source-Breakdown-Voltage
600 V
Vgs-th-Gate-Source-Threshold-Voltage
5 V
Resistencia a la fuente de desagüe de Rds
5.1 Ohms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
60 ns
Tiempo de retardo de encendido típico
28 ns
Qg-Gate-Charge
7 nC
Transconductancia directa-Mín.
1.4 S
Modo de canal
Mejora
Tags
IXTY2N, IXTY2, IXTY, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Parte # Mfg. Descripción Valores Precio
IXTY2N60P
DISTI # IXTY2N60P-ND
IXYS CorporationMOSFET N-CH 600V 2A D-PAK
RoHS: Compliant
Min Qty: 70
Container: Tube
Limited Supply - Call
    IXTY2N60P
    DISTI # 747-IXTY2N60P
    IXYS CorporationMOSFET 2.0 Amps 600 V 4.7 Ohm Rds
    RoHS: Compliant
    94
    • 1:$1.2500
    • 10:$1.1300
    • 25:$0.9810
    • 50:$0.9190
    • 100:$0.9060
    • 250:$0.7350
    • 500:$0.7050
    • 1000:$0.5840
    • 2500:$0.4900
    Imagen Parte # Descripción
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    IXTY1R4N120PHV

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    IXTY08N100P

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    OMO.#: OMO-IXTY08N100P

    MOSFET 0.8 Amps 1000V 20 Rds
    IXTY44N10T

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    MOSFET 44 Amps 100V 25.0 Rds
    IXTY4N65X2 TRL

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    OMO.#: OMO-IXTY4N65X2-TRL-1190

    Nuevo y original
    IXTY08N100D2TRL

    Mfr.#: IXTY08N100D2TRL

    OMO.#: OMO-IXTY08N100D2TRL-1190

    Nuevo y original
    IXTY2N100P

    Mfr.#: IXTY2N100P

    OMO.#: OMO-IXTY2N100P-IXYS-CORPORATION

    IGBT Transistors MOSFET 2 Amps 1000V 7.5 Rds
    IXTY1R6N50P

    Mfr.#: IXTY1R6N50P

    OMO.#: OMO-IXTY1R6N50P-IXYS-CORPORATION

    IGBT Transistors MOSFET 1.6 Amps 500 V 6 Ohm Rds
    IXTY08N120P

    Mfr.#: IXTY08N120P

    OMO.#: OMO-IXTY08N120P-IXYS-CORPORATION

    MOSFET 0.8 Amps 1200V 25 Rds
    Disponibilidad
    Valores:
    Available
    En orden:
    1000
    Ingrese la cantidad:
    El precio actual de IXTY2N60P es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,74 US$
    0,74 US$
    10
    0,70 US$
    6,98 US$
    100
    0,66 US$
    66,15 US$
    500
    0,62 US$
    312,40 US$
    1000
    0,59 US$
    588,00 US$
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