PartNumber | IXTY26P10T-TRL | IXTY26P10T | IXTY2N100P |
Description | Discrete Semiconductor Modules TrenchP Power MOSFET | MOSFET TrenchP Power MOSFET | MOSFET 2 Amps 1000V 7.5 Rds |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | Discrete Semiconductor Modules | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Product | Power MOSFET Modules | - | - |
Type | TrenchP | TrenchP Power MOSFET | - |
Vgs Gate Source Voltage | 15 V | 15 V | 20 V |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Packaging | Reel | Tube | Tube |
Configuration | Single | - | Single |
Brand | IXYS | IXYS | IXYS |
Transistor Polarity | P-Channel | P-Channel | N-Channel |
Fall Time | 11 ns | 11 ns | 27 ns |
Id Continuous Drain Current | - 26 A | 26 A | 2 A |
Pd Power Dissipation | 150 W | 150 W | 86 W |
Product Type | Discrete Semiconductor Modules | MOSFET | MOSFET |
Rds On Drain Source Resistance | 90 mOhms | 90 mOhms | 7.5 Ohms |
Rise Time | 15 ns | 15 ns | 29 ns |
Factory Pack Quantity | 2500 | 70 | 70 |
Subcategory | Discrete Semiconductor Modules | MOSFETs | MOSFETs |
Tradename | TrenchP | TrenchP | - |
Typical Turn Off Delay Time | 37 ns | 37 ns | 80 ns |
Typical Turn On Delay Time | 20 ns | 20 ns | 25 ns |
Vds Drain Source Breakdown Voltage | - 100 V | 100 V | 1 kV |
Vgs th Gate Source Threshold Voltage | - 4.5 V | 4.5 V | - |
Technology | - | Si | Si |
Qg Gate Charge | - | 52 nC | - |
Channel Mode | - | Enhancement | Enhancement |
Height | - | 2.38 mm | 2.38 mm |
Length | - | 6.22 mm | 6.73 mm |
Series | - | IXTY26P10 | IXTY2N100 |
Width | - | 6.73 mm | 6.22 mm |
Forward Transconductance Min | - | 10 S | - |
Unit Weight | - | 0.081130 oz | 0.012346 oz |
Number of Channels | - | - | 1 Channel |
Transistor Type | - | - | 1 N-Channel |