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IXTY2N65X2

IXTY2N65X2
Mfr. #:
IXTY2N65X2
Fabricante:
Littelfuse
Descripción:
MOSFET DISCMSFT NCHULTRAJNCTN X2CLASS
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXTY2N65X2 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IXTY2N65X2 más información
Atributo del producto
Valor de atributo
Fabricante:
IXYS
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-252-3
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
650 V
Id - Corriente de drenaje continua:
2 A
Rds On - Resistencia de la fuente de drenaje:
2.3 Ohms
Vgs th - Voltaje umbral puerta-fuente:
3 V
Vgs - Voltaje puerta-fuente:
30 V
Qg - Carga de puerta:
4.3 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
55 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
HiPerFET
Embalaje:
Tubo
Serie:
X2-Class
Marca:
IXYS
Transconductancia directa - Mín .:
1.1 S
Otoño:
14 ns
Tipo de producto:
MOSFET
Hora de levantarse:
19 ns
Cantidad de paquete de fábrica:
70
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
20 ns
Tiempo típico de retardo de encendido:
15 ns
Unidad de peso:
0.081130 oz
Tags
IXTY2N, IXTY2, IXTY, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***trelec
MOSFET, Single - N-Channel, 650V, 2A, 55W, TO-252
***S
new, original packaged
***ark
Mosfet, N-Ch, 650V, 2A, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:650V; On Resistance Rds(On):2.3Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Rohs Compliant: Yes
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
X2-Class 650V-700V Power MOSFETs with HiPerFET™
IXYS X2-Class 650V-700V Power MOSFETs with HiPerFET™ are designed for high-efficiency and high-speed power switching applications. The Ultra-Junction X2-Class MOSFETs offer low gate charge and excellent ruggedness with a fast intrinsic diode. These MOSFETs are available in many standard industrial packages including isolated types. Typical applications are switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, AC and DC motor drives and robotics and servo controls.
Ultra Junction MOSFETs
IXYS Ultra Junction MOSFETs feature low RDS(on) and low Qg in low inductance industry standard packages. These devices enable high power density, easy mounting, and space-saving opportunities. The ultra junction MOSFETs are ideal solutions in SMPS, DC-DC converters, PFC circuits, AC and DC motor drives, and robotics/servo controls.
Parte # Mfg. Descripción Valores Precio
IXTY2N65X2
DISTI # V36:1790_15875898		IXYS CorporationTrans MOSFET N-CH 650V 2A 3-Pin(2+Tab) DPAK0
    IXTY2N65X2
    DISTI # IXTY2N65X2-ND    		IXYS CorporationMOSFET N-CH 650V 2A X2 TO-252
    RoHS: Compliant
    Min Qty: 70
    Container: Tube    		Temporarily Out of Stock
    • 70:$1.2880
    IXTY2N65X2
    DISTI # 747-IXTY2N65X2    		IXYS CorporationMOSFET
    RoHS: Compliant    		140
    • 1:$1.6400
    • 10:$1.4800
    • 25:$1.2900
    • 50:$1.2100
    • 100:$1.1900
    • 250:$0.9660
    • 500:$0.9260
    • 1000:$0.7680
    • 2500:$0.6440
    IXTY2N65X2
    DISTI # IXTY2N65X2    		IXYS CorporationTransistor: N-MOSFET,X2-Class,unipolar,650V,2A,55W,TO252130
    • 70:$0.6900
    • 20:$0.7600
    • 5:$0.8600
    • 1:$0.9600
    IXTY2N65X2
    DISTI # 2674795    		IXYS CorporationMOSFET, N-CH, 650V, 2A, TO-252
    RoHS: Compliant    		5
    • 100:£1.1500
    • 25:£1.1700
    • 5:£1.5700
    IXTY2N65X2
    DISTI # 2674795    		IXYS CorporationMOSFET, N-CH, 650V, 2A, TO-252
    RoHS: Compliant    		5
    • 2500:$1.0300
    • 1000:$1.0800
    • 500:$1.1400
    • 250:$1.2100
    • 100:$1.3900
    • 25:$1.6400
    • 10:$2.0200
    • 1:$2.3200
    Imagen Parte # Descripción
    C4D05120E

    Mfr.#: C4D05120E

    OMO.#: OMO-C4D05120E

    		 Schottky Diodes & Rectifiers SIC SCHOTTKY DIODE 1200V, 5A
    CS0603KRX7R0BB104

    Mfr.#: CS0603KRX7R0BB104

    OMO.#: OMO-CS0603KRX7R0BB104

    		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 100 nF 100 V 10% Ceramic Capacitors
    CS0603KRX7R0BB104

    Mfr.#: CS0603KRX7R0BB104

    OMO.#: OMO-CS0603KRX7R0BB104-YAGEO

    		 CAP CER 0.1UF 100V X7R 0603
    C4D05120E

    Mfr.#: C4D05120E

    OMO.#: OMO-C4D05120E-WOLFSPEED

    		 Schottky Diodes & Rectifiers SIC SCHOTTKY DIODE 1200V, 5A
    Disponibilidad
    Valores:
    140
    En orden:
    2123
    Ingrese la cantidad:
    El precio actual de IXTY2N65X2 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    1,64 US$
    1,64 US$
    10
    1,48 US$
    14,80 US$
    25
    1,29 US$
    32,25 US$
    50
    1,21 US$
    60,50 US$
    100
    1,19 US$
    119,00 US$
    250
    0,97 US$
    241,50 US$
    500
    0,93 US$
    463,00 US$
    1000
    0,77 US$
    768,00 US$
    2500
    0,64 US$
    1 610,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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