IRF670

IRF6708S2TR1PBF vs IRF6708S2TRPBF vs IRF6709S2TR1PBF

 
PartNumberIRF6708S2TR1PBFIRF6708S2TRPBFIRF6709S2TR1PBF
DescriptionMOSFET 30V 1 N-CH HEXFET DIRECTFET S1MOSFETMOSFET 25V 1 N-CH HEXFET 7.8mOhms 8.1nC
ManufacturerInfineonInfineonInfineon
Product CategoryMOSFETMOSFETMOSFET
RoHSY-Y
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseDirectFET-S1DirectFET-S1DirectFET-S1
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage30 V30 V25 V
Id Continuous Drain Current36 A36 A39 A
Rds On Drain Source Resistance14.3 mOhms14.3 mOhms13.5 mOhms
Vgs Gate Source Voltage20 V20 V20 V
Qg Gate Charge6.6 nC6.6 nC8.1 nC
Pd Power Dissipation20 W20 W21 W
ConfigurationSingleSingleSingle
PackagingReel-Reel
Height0.74 mm0.74 mm0.74 mm
Length4.85 mm4.85 mm4.85 mm
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width3.95 mm3.95 mm3.95 mm
BrandInfineon / IRInfineon / IRInfineon / IR
Product TypeMOSFETMOSFETMOSFET
Factory Pack Quantity1000-1000
SubcategoryMOSFETsMOSFETsMOSFETs
Part # AliasesSP001523958-SP001523938
Unit Weight0.017637 oz-0.003527 oz
Fabricante Parte # Descripción RFQ
Infineon / IR
Infineon / IR
IRF6708S2TR1PBF MOSFET 30V 1 N-CH HEXFET DIRECTFET S1
IRF6708S2TRPBF MOSFET
IRF6709S2TRPBF MOSFET 25V 1 N-CH HEXFET 7.8mOhms 8.1nC
IRF6709S2TR1PBF MOSFET 25V 1 N-CH HEXFET 7.8mOhms 8.1nC
Infineon Technologies
Infineon Technologies
IRF6706S2TR1PBF MOSFET N-CH 25V 17A DIRECTFET-S1
IRF6706S2TRPBF MOSFET N-CH 25V DIRECTFET S1
IRF6708S2TR1PBF MOSFET N-CH 30V 13A DIRECTFET-LV
IRF6708S2TRPBF MOSFET N-CH 30V 13A DIRECTFET-LV
IRF6709S2TR1PBF MOSFET N-CH 25V 12A DIRECTFET-S1
IRF6709S2TRPBF MOSFET 25V 1 N-CH HEXFET 7.8mOhms 8.1nC
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