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IRF6709S2TRPBF

IRF6709S2TRPBF
Mfr. #:
IRF6709S2TRPBF
Fabricante:
Infineon / IR
Descripción:
MOSFET 25V 1 N-CH HEXFET 7.8mOhms 8.1nC
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRF6709S2TRPBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF6709S2TRPBF DatasheetIRF6709S2TRPBF Datasheet (P4-P6)IRF6709S2TRPBF Datasheet (P7-P9)IRF6709S2TRPBF Datasheet (P10)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
DirectFET-S1
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
25 V
Id - Corriente de drenaje continua:
39 A
Rds On - Resistencia de la fuente de drenaje:
10.1 mOhms
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
8.1 nC
Pd - Disipación de energía:
21 W
Configuración:
Único
Embalaje:
Carrete
Altura:
0.74 mm
Longitud:
4.85 mm
Tipo de transistor:
1 N-Channel
Ancho:
3.95 mm
Marca:
Infineon / IR
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
4800
Subcategoría:
MOSFET
Parte # Alias:
SP001530266
Tags
IRF670, IRF67, IRF6, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 25V 12A 6-Pin Direct-FET S1 T/R
***ernational Rectifier
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET S1 package rated at 12 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
***ark
N Channel, MOSFET, 25V, 12A, DirectFET S1; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0059ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V ;RoHS Compliant: Yes
Parte # Mfg. Descripción Valores Precio
IRF6709S2TRPBF
DISTI # IRF6709S2TRPBF-ND		Infineon Technologies AGMOSFET N-CH 25V 12A DIRECTFET-S1
RoHS: Compliant
Min Qty: 4800
Container: Tape & Reel (TR)		Limited Supply - Call
    IRF6709S2TRPBF
    DISTI # 70019594    		Infineon Technologies AGMOSFET,25V,12.000A,DIRECTFET-LV
    RoHS: Compliant    		0
    • 4800:$1.0400
    IRF6709S2TRPBF
    DISTI # 942-IRF6709S2TRPBF    		Infineon Technologies AGMOSFET 25V 1 N-CH HEXFET 7.8mOhms 8.1nC
    RoHS: Compliant    		0
      Imagen Parte # Descripción
      IRF6709S2TRPBF

      Mfr.#: IRF6709S2TRPBF

      OMO.#: OMO-IRF6709S2TRPBF

      		 MOSFET 25V 1 N-CH HEXFET 7.8mOhms 8.1nC
      IRF6709S2TR1PBF

      Mfr.#: IRF6709S2TR1PBF

      OMO.#: OMO-IRF6709S2TR1PBF

      		 MOSFET 25V 1 N-CH HEXFET 7.8mOhms 8.1nC
      IRF6709S2TR1PBF

      Mfr.#: IRF6709S2TR1PBF

      OMO.#: OMO-IRF6709S2TR1PBF-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 25V 12A DIRECTFET-S1
      IRF6709S2TRPBF

      Mfr.#: IRF6709S2TRPBF

      OMO.#: OMO-IRF6709S2TRPBF-INFINEON-TECHNOLOGIES

      		 MOSFET 25V 1 N-CH HEXFET 7.8mOhms 8.1nC
      Disponibilidad
      Valores:
      Available
      En orden:
      1000
      Ingrese la cantidad:
      El precio actual de IRF6709S2TRPBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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